A method of manufacturing a semiconductor device includes: forming a trench in a semiconductor layer of first conductivity type; in the trench, forming a first layer containing silicon and then forming a second layer containing first oxide or nitride on the first layer or forming the second layer and then forming the first layer on the second layer; and thermally oxidizing the first layer.

An electronic device including a semiconductor substrate having first and second opposite surfaces and including an electrical insulation trench extending in the substrate from the first surface to the second surface, the electrical insulation trench including lateral walls, an electrically-insulating layer covering the lateral walls, and a core made of a filling material separated from the substrate by the insulating layer and including an electrically-insulating portion extending in the substrate from the first surface and covering the core.

The present disclosure provides a method for preparing semiconductor structures. The method includes the following steps. A substrate is provided. A plurality of first trenches, a plurality of second trenches, a plurality of first island structures and a plurality of second island structures are formed. Each of the first island structures is separated from each of the second island structures by the first trenches. The plurality of first island structures are separated from each other by the second trenches, and the plurality of second island structures are separated from each other by the second trenches. A first dielectric layer is then conformally formed to cover sidewalls and a bottom of each first trench and sidewalls and a bottom of each second trench. A semiconductor layer is formed on the first dielectric layer. An oxidation is performed to convert the semiconductor layer into a semiconductor oxide layer in each of the first trenches and each of the second trenches. A second dielectric layer is then formed to fill the plurality of second trenches.

A method includes etching a semiconductor substrate to form a trench and a semiconductor strip. A sidewall of the semiconductor strip is exposed to the trench. The method further includes depositing a silicon-containing layer extending into the trench, wherein the silicon-containing layer extends on the sidewall of the semiconductor strip, filling the trench with a dielectric material, wherein the dielectric material is on a sidewall of the silicon-containing layer, and oxidizing the silicon-containing layer to form a liner. The liner comprises oxidized silicon. The liner and the dielectric material form parts of an isolation region. The isolation region is recessed, so that a portion of the semiconductor strip protrudes higher than a top surface of the isolation region and forms a semiconductor fin.

Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.

Methods comprising depositing a film material to form an initial film in a trench in a substrate surface are described. The film is treated to expand the film to grow beyond the substrate surface.

A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.

A method for forming CMOS devices includes masking a first portion of a tensile-strained silicon layer of a SOI substrate, doping a second portion of the layer outside the first portion and growing an undoped silicon layer on the doped portion and the first portion. The undoped silicon layer becomes tensile-strained. Strain in the undoped silicon layer over the doped portion is relaxed by converting the doped portion to a porous silicon to form a relaxed silicon layer. The porous silicon is converted to an oxide. A SiGe layer is grown and oxidized to convert the relaxed silicon layer to a compressed SiGe layer. Fins are etched in the first portion from the tensile-strained silicon layer and the undoped silicon layer and in the second portion from the compressed SiGe layer.

A method for forming CMOS devices includes masking a first portion of a tensile-strained silicon layer of a SOI substrate, doping a second portion of the layer outside the first portion and growing an undoped silicon layer on the doped portion and the first portion. The undoped silicon layer becomes tensile-strained. Strain in the undoped silicon layer over the doped portion is relaxed by converting the doped portion to a porous silicon to form a relaxed silicon layer. The porous silicon is converted to an oxide. A SiGe layer is grown and oxidized to convert the relaxed silicon layer to a compressed SiGe layer. Fins are etched in the first portion from the tensile-strained silicon layer and the undoped silicon layer and in the second portion from the compressed SiGe layer.