Embodiments herein disclose a method providing deposition of Gadolinium Oxide (Gd.sub.2O.sub.3) on a semiconductor substrate. The method comprises of selecting, in an RF-sputter system, a predefined substrate and depositing, in an Ar-plasma struck, the Gd.sub.2O.sub.3, over the predefined substrate to obtain a layer of the Gd.sub.2O.sub.3 over the predefined substrate. The Gd.sub.2O.sub.3 is grown epitaxially over the predefined substrate. The method further provides performing, annealing, of the layer of the Gd.sub.2O.sub.3 over the predefined substrate at a predefined temperature for a predefined time and obtaining, a layer of the Gd.sub.2O.sub.3, over the predefined substrate. Embodiment also provides a method for fabricating Semiconductor on Insulator Substrate (SIS).

Some embodiments of the present technology simplify the process of producing SOI wafers significantly compared to traditional methods. Furthermore, various embodiments provide a route for the integration of perovskite transition metal oxide thin films with different properties into SOI wafers. As such films display a wide array of novel electronic, magnetic, and optical phenomena, their integration into technologically-relevant SOI wafers will likely allow for the construction of a wide array of novel devices.