Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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H01L21/70
Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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H01L21/71
Manufacture of specific parts of devices defined in group H01L21/70
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H01L21/76
Making of isolation regions between components
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H01L21/762
Dielectric regions; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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H01L21/7624
using semiconductor on insulator [SOI] technology
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H01L21/76262
using selective deposition of single crystal silicon, i.e. SEG techniques
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H01L21/76262

Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation
09704860 · 2017-07-11 · ·

A method of forming a semiconductor device that includes providing regions of epitaxial oxide material on a substrate of a first lattice dimension, wherein regions of the epitaxial oxide material separate regions of epitaxial semiconductor material having a second lattice dimension are different than the first lattice dimension to provide regions of strained semiconductor. The regions of the strained semiconductor material are patterned to provide regions of strained fin structures. The epitaxial oxide that is present in the gate cut space obstructs relaxation of the strained fin structures. A gate structure is formed on a channel region of the strained fin structures separating source and drain regions of the fin structures.

METHOD OF FABRICATING CRYSTALLINE ISLAND ON SUBSTRATE
20170154903 · 2017-06-01 ·

Certain electronic applications, such as OLED display back panels, require small islands of high-quality semiconductor material distributed over a large area. This area can exceed the areas of crystalline semiconductor wafers that can be fabricated using the traditional boule-based techniques. This specification provides a method of fabricating a crystalline island of an island material, the method comprising depositing particles of the island material abutting a substrate, heating the substrate and the particles of the island material to melt and fuse the particles to form a molten globule, and cooling the substrate and the molten globule to crystallize the molten globule, thereby securing the crystalline island of the island material to the substrate. The method can also be used to fabricate arrays of crystalline islands, distributed over a large area, potentially exceeding the areas of crystalline semiconductor wafers that can be fabricated using boule-based techniques.

Composite substrate and production method therefor
12424434 · 2025-09-23 · ·

Provided are a composite substrate in which a wafer to be bonded has a sufficiently small surface roughness and which can be prevented from causing film peeling, and a method for producing the composite substrate. The composite substrate 40 of the present invention has a silicon wafer 10, an interlayer 11, and a single-crystal silicon thin film or oxide single-crystal thin film 20a stacked in the order listed and has a damaged layer 12a in a portion of the silicon wafer 10 on the side of the interlayer 11.