A method can be used to generate a fluid droplet pattern for an imprint lithography process using a fluid dispense system having fluid dispense ports. The method can include determining a fluid droplet pattern for dispensing a formable material onto a substrate; during a first pass, dispensing the formable material onto the substrate to form a first part of the fluid droplet pattern for an imprint field; offsetting the fluid dispense ports and substrate relative to each other in an offset direction; and during a second pass, dispensing the formable material onto the substrate to form a second part of the fluid droplet pattern for the imprint field. The method can be used to form a patterned layer over a semiconductor wafer in fabricating an electronic device. An apparatus can be configured to carry out the method.

According to one embodiment, an original plate for imprint lithography has a first surface side having a patterned portion thereon. The patterned portion includes a groove having a bottom surface recessed from a first surface to a first depth, and a columnar portion on the bottom surface and protruding from the bottom surface to extend beyond the first surface. The original plate may be used to form replica templates by imprint lithography processes. The replica templates can be used in semiconductor device manufacturing processes or the like.

Provided are a method of manufacturing a porous body capable of easily manufacturing a porous body, a porous body, a method of manufacturing a device, a device, a method of manufacturing a wiring structure, and a wiring structure. A photocurable composition including a condensing gas and a polymerizable compound is applied to a substrate or a mold, the photocurable composition is sandwiched between the substrate and the mold and then the photocurable composition is irradiated with light to cure the photocurable composition, and the mold is released from a surface of the cured photocurable composition.

Multi-patterning methods are provided for use in fabricating an array of metal lines comprising metal lines with different widths. For example, patterning methods implement spacer-is-dielectric (SID)-based self-aligned double patterning (SADP) methods for fabricating an array of metal lines comprising elongated metal lines with different widths, wherein an unblock mask is utilized as part of the process flow to overlap mandrel assigned and non-mandrel assigned features in a given SADP pattern to define regions to unblock a metal fill (remove dielectric material between wires) in a dielectric layer between defined metal lines of an a SADP pattern thus enabling the formation of wide metal lines within any region of a pattern of elongated metal lines formed with a minimum feature width.

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least: a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411, 411) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step; c) a step of removing (461, 462) the modified zones (411, 411, 411), the removal comprising a step of etching the modified zones (411, 411, 411) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

An extreme ultraviolet (EUV) reflective mask including: a mask substrate, a reflection layer on the mask substrate, and an absorption layer on the reflection layer, wherein the absorption layer includes a main pattern and non-diffraction patterns the main pattern, the non-diffraction patterns form a honeycomb shape, a pitch between the non-diffraction patterns is less than a diffraction limit, and the main pattern is isolated from the non-diffraction patterns.

An organic light emitting device is described, having an OLED including an anode, a cathode, and at least one organic layer between the anode and cathode. At least a portion of an electrode surface includes a plurality of scattering structures positioned in a partially disordered pattern resembling nodes of a two dimensional lattice. The scattering structures are positioned around the nodes of the two dimensional lattice with the average distance between the position of each scattering structure and a respective node of the lattice is from 0 to 0.5 of the distance between adjacent lattice nodes. A method of manufacturing an organic light emitting device and a method of enhancing the light-extraction efficiency of an organic light emitting device are also described.

A mold includes a mold base material and a rugged structure located at a main surface of the mold base material. The rugged structure includes a plurality of linearly shaped projected portions for forming wiring, and a circularly shaped projected portion for forming a pad portion, in which a light-shielding layer is provided at a top portion flat surface of the circularly shaped projected portion for forming the pad portion.

A modified trench metal-semiconductor alloy formation method involves depositing a layer of a printable dielectric or a sacrificial carbon material within a trench structure and over contact regions of a semiconductor device, and then selectively removing the printable dielectric or sacrificial carbon material to segment the trench and form plural contact vias. A metallization layer is formed within the contact vias and over the contact regions.

A method can be used to generate a fluid droplet pattern for an imprint lithography process using a fluid dispense system having fluid dispense ports. The method can include determining a fluid droplet pattern for dispensing a formable material onto a substrate; during a first pass, dispensing the formable material onto the substrate to form a first part of the fluid droplet pattern for an imprint field; offsetting the fluid dispense ports and substrate relative to each other in an offset direction; and during a second pass, dispensing the formable material onto the substrate to form a second part of the fluid droplet pattern for the imprint field. The method can be used to form a patterned layer over a semiconductor wafer in fabricating an electronic device. An apparatus can be configured to carry out the method.