H01L21/76817

Method of manufacturing semiconductor device using different types of plating films
12506016 · 2025-12-23 · ·

In a frame member including a first region and a second region that are extending in a first direction in parallel to each other while being spaced apart from each other, first and second plating films are formed in the first and second regions, respectively. The second plating film is different in a type from the first plating film. Then, a stamping process is performed to the frame member including the first region and the second region, thereby a lead frame including a plurality of leads is formed. The lead frame includes a first lead group and a second lead group. The first plating film is formed in the first lead group, but the second plating film is not formed in the first lead group. Meanwhile, the second plating film is formed in the second lead group, but the first plating film is not formed in the second lead group.