The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a collector contact and methods of manufacture. The structure includes: a lateral bipolar transistor which includes an emitter, a base and a collector; an emitter contact to the emitter; a base contact to the base; and a collector contact to the collector and extending to an underlying substrate underneath the collector.

A semiconductor device includes an emitter, a base, and a collector. A portion of the collector is located below a trench in a substrate. A collector silicide is located on at least a portion of a bottom portion of the trench and on at least a portion of a sidewall of the trench. The collector silicide structure is electrically coupled to a collector contact structure.

Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure comprises a first terminal including a first raised semiconductor layer, a second terminal including a second raised semiconductor layer, and a base layer positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The structure further comprises a modulator including a semiconductor layer in direct contact with the base layer. The base layer has a first conductivity type, and the semiconductor layer has a second conductivity type opposite to the first conductivity type.

Disclosed examples include integrated circuits and bipolar transistors with a first region of a first conductivity type in a substrate, a collector region of a second conductivity type disposed in the substrate, and a base region of the first conductivity type extending into the first region. A first emitter region of the second conductivity type extends into the first region and includes a lateral side spaced from and facing the base region. A second emitter region of the second conductivity type extends downward into the first region, abutting the top surface and an upper portion of the first lateral side of the first emitter region to mitigate surface effects and gain degradation caused by hydrogen injection from radiation to provide a radiation hardened bipolar transistor.

After forming an epitaxial germanium layer over a germanium-on-insulator substrate including an insulator layer and a doped germanium layer overlying the insulator layer, the doped germanium layer is selectively removed and a passivation layer is formed within a space between the epitaxial germanium layer and the insulator layer that is formed by removal of the doped germanium layer. A lateral bipolar transistor is subsequently formed in the epitaxial germanium layer.

The method of manufacturing an integrated circuit includes obtaining a silicon carbide substrate of a first conductivity type having an epitaxial layer of a second conductivity type thereon. A dopant is implanted in the epitaxial layer to form a first region of the first conductivity type that extends the full depth of the epitaxial layer. A first transistor is formed in the first region and a second transistor is formed in the epitaxial layer.

The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region; an emitter region above the intrinsic base region; a collector region under the intrinsic base region; and an extrinsic base region comprising metal material, and which surrounds the intrinsic base region and the emitter region.

The disclosure provides a bipolar transistor structure with multiple bases, and related methods. A bipolar transistor structure includes a first emitter/collector (E/C) material above an insulator. The first E/C material has first sidewall and a second sidewall over the insulator. A first base is above the insulator adjacent the first sidewall of the first E/C material. A second base is above the insulator adjacent the second sidewall of the first E/C material. A second E/C material is above the insulator and adjacent the first base. A width of the first base between the first E/C material and the second E/C material is less than a width of the first E/C material, and the first base protrudes horizontally outward from an end of the first E/C material and an end of the second E/C material.

One illustrative device disclosed herein includes a semiconductor substrate and a bipolar junction transistor (BJT) device that comprises a collector region, a base region and an emitter region. In this example, the device also includes a field effect transistor and at least one base conductive contact structure that conductively and physically contacts the base region.

A bipolar transistor includes a stack of an emitter, a base, and a collector. The base is structured to have a comb shape including fingers oriented in a plane orthogonal to a stacking direction of the stack.