A multijunction solar cell in accordance with an example implementation includes a growth substrate; a first solar subcell disposed over or in the growth substrate; a tunnel diode disposed over the first solar subcell; and a grading interlayer directly disposed over the tunnel diode; a sequence of layers of semiconductor material forming a solar cell disposed over the grading interlayer comprising a plurality of solar subcells. The multijunction solar cell also includes a first wafer bowing inhibition layer disposed directly over an uppermost sublayer of the grading interlayer, such bowing inhibition layer having an in-plane lattice constant greater than the in-plane lattice constant of the uppermost sublayer of the grading interlayer. A second wafer bowing inhibition layer is disposed directly over the first wafer bowing inhibition layer.

High efficiency dilute nitride bismide alloys and multijunction photovoltaic cells incorporating the high efficiency dilute nitride bismide alloys are disclosed. Bismuth-containing dilute nitride subcells exhibit a high efficiency across a broad range of irradiance energies, a high short circuit current density, and a high open circuit voltage.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

Dilute nitride subcells with graded doping are disclosed. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.

An ultraviolet (UV) photo-detecting device, including: a substrate; a first nitride layer disposed on the substrate; a second nitride layer disposed between the first nitride layer and the substrate; a light absorption layer disposed on the first nitride layer; and a Schottky junction layer disposed on the light absorption layer.

The invention relates to a semiconductor device, e.g. for the emission or absorption of light, preferably in the deep ultraviolet (DUV) range. The device, e.g. a resonant cavity light emitting diode (RCLED) or a laser diode, is formed from: a substrate layer (302), preferably comprising a distributed Bragg reflector (DBR); a graphitic layer (304); and at least one semiconductor structure (310), preferably a wire or a pyramid, grown on the graphitic layer, with or without the use of a mask layer (306). The semiconductor structure is constructed from at least one III-V semiconductor n-type doped region (316) and a hexagonal boron-nitride (hBN) region (312), preferably being p-type doped hBN.

An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes. The sensor may be configured to be sensitive to a specific subtype or subband of ultraviolet radiation to be detected by selecting a specific composition of said Group-III Nitride layers.

The present technology relates to a solid-state image capturing apparatus and an electronic device that can acquire a normal image and a narrow band image at the same time. The solid-state image capturing apparatus includes a plurality of substrates laminated in two or more layers, and two or more substrates of the plurality of substrates have pixels that perform photoelectric conversion. At least one substrate of the substrates having the pixels is a visible light sensor that receives visible light, and at least another substrate of the substrates having the pixels is a narrow band light sensor that includes narrow band filters being optical filters permeating light in a narrow wavelength band, and receives narrow band light in the narrow band.

A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

A hetero-junction phototransistor with a first layer comprising an InP N buffer and substrate, a second layer comprising an InGaAs N collector on the InP N buffer and substrate, a plurality of InGaAs P bases on the InGaAs N collector layer, and a plurality of InAIAs N emitters is described. Each emitter of the plurality of InAIAs N emitters is on a different base of the plurality of InGaAs P bases. The hetero-junction phototransistor comprises a plurality of InGaAs N+ caps, wherein each cap of the plurality of InGaAs N+ caps is on a different emitter of the plurality of InAIAs N emitters. The hetero-junction phototransistor comprises one or more electrical contacts. Each of the one or more electrical contacts is on a different cap of the plurality of InGaAs N+ caps.