A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode to 10 nm to 100 nm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.

A method for producing a thin-film solar module with serially connected solar cells and related device. A back electrode layer is deposited on one side of a flat substrate and subdivided by first patterning trenches. An absorber layer is deposited over the back electrode layer and subdivided by second patterning trenches. A front electrode layer is deposited over the absorber layer. At least the front electrode layer is subdivided by third patterning trenches. A direct succession of a first patterning trench, a second patterning trench, and two adjacent third patterning trenches forms a patterning zone. The third patterning trenches are produced by laser ablation through a pulsed laser beam, where one third patterning trench is produced with laser pulses of higher energy and the other third patterning trench of the patterning zone is produced with laser pulses of lower energy.

An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

Methods and apparatus form a photon absorber layer of a photodiode with characteristics conducive to applications such as, but not limited to, image sensors and the like. The absorber layer uses a copper-indium-gallium-selenium (CIGS) material with a gallium mole fraction of approximately 35% to approximately 70% to control the absorbed wavelengths while reducing dark current. Deposition temperatures of the absorber layer are controlled to less than approximately 400 degrees Celsius to produce sub-micron grain sizes. The absorber layer is doped with antimony at a temperature of less than approximately 400 degrees Celsius to increase the absorption.

The photoelectric conversion layer of an embodiment is based on Cu.sub.2O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.

A layer structure for a thin-film solar cell and production method are provided. The layer structure for the thin-film solar cell includes a photovoltaic absorber layer doped, at least in a region which borders a surface of the photovoltaic absorber layer, with at least one alkali metal. The layer structure has an oxidic passivating layer on the surface of the photovoltaic absorber layer, which is designed to protect the photovoltaic absorber layer from corrosion.

A method for preparing a solar cell, includes: forming a first electrode on a substrate; forming a light absorbing layer on the first electrode; and forming a second electrode on the light absorbing layer, wherein the method further comprises forming an impurity material layer including an impurity element on the light absorbing layer adjacent to the first electrode or the second electrode in any one side or both sides thereof, and forming a doping layer by diffusing the impurity element into a portion of the light absorbing layer.

An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

Disclosed are a hybrid structure using a graphene-carbon nanotube and a perovskite solar cell using the same. The hybrid structure includes a graphene-carbon nanotube formed by laminating a second graphene coated with a polymer on an upper surface of a first graphene coated with a carbon nanotube. The perovskite solar cell includes: a substrate; a first electrode formed on the substrate and including a fluorine doped thin oxide (FTO); an electron transfer layer formed on the first electrode and including a compact-titanium oxide (c-TiO.sub.2); a mesoporous-titanium oxide (m-TiO.sub.2) formed on the electron transfer layer; a perovskite layer formed on the m-TiO.sub.2 and including a perovskite compound; and a graphene-carbon nanotube hybrid structure formed on the perovskite layer.

A thin-film solar module with a substrate and a layer structure applied thereon. The layer structure has a rear electrode layer, a front electrode layer, and an absorber layer arranged between the rear electrode layer and the front electrode layer. The absorber layer has doping of a first conductor type, while the front electrode layer has doping of a second conductor type. Serially connected solar cells are formed in the layer structure by patterning zones having a first patterning trench subdividing the rear electrode layer, a second patterning trench subdividing the absorber layer, and a third patterning trench subdividing the front electrode layer.