A layered structure used for detecting incident light includes a substrate having a surface with a high Miller index crystal orientation and a superlattice structure formed over the substrate at the surface. The superlattice structure is aligned to the high Miller index crystal orientation and exhibits a red-shifted long wave infrared response range based on the crystal orientation as compared to a superlattice structure formed over a substrate at a surface with a (100) crystal orientation.

The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.

Systems are provided including night vision goggles and up-conversion circuits for converting short wave infrared (SWIR) light into near infrared (NIR) light or other visible light in low-light environments. An array of electrically coupled photodiodes, amplifiers, and NIR light emitters generate and amplify a current in response to SWIR, powering the light emitters to generate NIR light. The NIR can then be directed into a photomultiplier tube to amplify the light and allow an operator to see in low-light environments.

A photo detector comprises a first photo diode configured to capture visible light, a second photo diode configured to capture one of infrared light or ultraviolet light, and an isolation region between the first photo diode and the second photo diode. The photo detector is capable of capturing infrared light and ultraviolet light in addition to visible light.

A photo detector comprises a first photo diode configured to capture visible light, a second photo diode configured to capture one of infrared light or ultraviolet light, and an isolation region between the first photo diode and the second photo diode. The photo detector is capable of capturing infrared light and ultraviolet light in addition to visible light.

A method of fabricating a field-effect transistor in which a native oxide layer is removed prior to etching a gate recess. The cleaning step ensures that the etch of the gate recess starts at the same time across an entire sample, such that a uniform gate recess depth and profile can be achieved across an array of field-effect transistors. This results in a highly uniform switch-off voltage for the field-effect transistors in the array.

A light detection element includes a semiconductor substrate, a light absorbing layer of a first conductivity type formed on the semiconductor substrate, a cap layer of a first conductivity type formed on the light absorbing layer, and a semiconductor region of a second conductivity type formed within the cap layer and forming a pn junction with the cap layer. A depletion layer formed around the semiconductor region does not reach the light absorbing layer in a case where a reverse bias is not applied to the pn junction, and exceeds a position amounting to 50% of a thickness of the light absorbing layer from the cap layer side in a case where a reverse bias of 20 V is applied to the pn junction.

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

A photodiode includes a substrate having a lateral side having an inclined light incidence surface that forms an angle of 45 or 60 degrees with respect to a normal of the substrate; and an epitaxial layer disposed on the substrate. A method for manufacturing a photodiode is provided, including: providing a substrate; forming an epitaxial layer on the substrate; and making a lateral side of the substrate an inclined light incidence surface that forms an angle of 45 or 60 degrees with respect to a normal of the substrate. Another method is also provided, including: providing a substrate; forming an etch stop layer on the substrate; forming an epitaxial layer on the etch stop layer; and applying an agent to etch a lateral side of the substrate to form an inclined light incidence surface having an angle of 45 or 60 degrees with respect to a normal of the substrate.