An electronics module assembly for detecting photons is provided to include: a substrate layer; a buried layer deposited upon a first surface area of the substrate layer; an intrinsic layer deposited upon a first portion of a first surface area of the buried layer; a plug layer deposited upon a second portion of the first surface area of the buried layer; a p-plus layer deposited upon a first surface area of the intrinsic layer; an n-plus layer deposited upon a first surface area of the plug layer; a pre-metal dielectric (PMD) layer deposited upon the p-plus layer and n-plus layer; a first node coupled, through the PMD layer, to the p-plus layer; and a second node coupled, through the PMD layer, to the n-plus layer.

An image sensor (32) includes a plurality of pixel sensing portion (320) that are arranged in columns and rows. Each of the pixel sensing portions (320) includes a thin film transistor (11), and a photodetection diode (13) including n-type (16), intrinsic (15), and p-type semiconductor layers (14). The intrinsic semiconductor layer (15) of the photodetection diode (13) of each of the pixel sensing portions (320) has a crystallinity gradient that varies from an amorphous silicon structure to a microcrystalline silicon structure along a first direction (L1) extending from the p-type semiconductor layer (14) toward the n-type semiconductor layer (16). An image sensing-enabled display apparatus (3) and a method of making the image sensor (32) are also disclosed.

An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

A diode and its fabrication method are provided. The diode includes a substrate, a buffer layer on a side of the substrate, a first film layer, a second film layer and a third film layer. The first film layer is a polycrystalline silicon film layer; the second film layer is an amorphous silicon film layer; and the third film layer is one of the polycrystalline silicon film layer and the amorphous silicon film layer. The diode at least includes a first portion, a second portion, a third portion, a first electrode, and a second electrode. The first portion is located in the first film layer; the second portion is located in the second film layer; and the third portion is located in the third film layer. The first electrode is electrically connected to the first portion, and the second electrode is electrically connected to the third portion.

A photoelectric conversion device for detecting the spot size of incident light, includes a photoelectric conversion element having a photoelectric conversion substrate with two main surfaces, and first and second sensitivity section sections; and scanners that relatively scan incident light on the main surfaces of the photoelectric conversion element. When a sensitivity region on a main surface of the first sensitivity section is defined as a first sensitivity region and sensitivity regions that appear on a main surface of the second sensitivity sections are defined as second sensitivity regions, the first sensitivity region receives at least part of the light incident on the main surface during scanning, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity region with respect to the second sensitivity regions in the irradiation region is decreased.

Disclosed is a pixel array panel for a digital X-ray detector, the pixel array panel including a plurality of pixel regions, wherein the pixel array panel includes: a first electrode corresponding to each pixel region; a plurality of PIN (P-type/I-type/N-type semiconductors) layers disposed on the first electrode and arranged in a matrix form; and a second electrode disposed on each PIN layer.

A photonic device can include an optical detector (e.g., a photodetector) coupled to silicon waveguides. Unlike silicon, germanium is an efficient detector at the wavelength of optical signals typically used for data communication. Instead of directly coupling the waveguide to the germanium, in one embodiment, the waveguide extends below the germanium but is spaced sufficiently away from the germanium so that the optical signal is not transferred. Instead, an optical transfer structure (e.g., a tapered waveguide or an optical grating) is disposed between the germanium and the waveguide. The waveguide first transfers the optical signal into the optical transfer structure which then transfers the optical signal into the germanium.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

An active matrix substrate includes a photoelectric conversion element, an electrode provided on at least one main surface of the photoelectric conversion element, and a first inorganic film covering a side surface of the photoelectric conversion element. The electrode includes an extending section covering the side surface of the photoelectric conversion element through intermediation of the first inorganic film.

A fingerprint identification device and a manufacturing method thereof, an array substrate and a display apparatus are provided. The fingerprint identification device comprises first gate lines and read signal lines. The first gate lines and the read signal lines intersect with each other to define a plurality of fingerprint identification units, and each fingerprint identification unit is provided with a photosensitive element and a first transistor. The photosensitive element includes a first electrode layer, and a first doped semiconductor layer, a second doped semiconductor layer and a second electrode layer which are sequentially positioned on a surface of the first electrode layer.