A self-luminous display pixel is provided, including: a self-luminous circuit including a self-luminous device, the self-luminous device including a bottom electrode layer; wherein the bottom electrode layer includes a light blocking layer; and the self-luminous display pixel further includes an optical fingerprint sensing circuit, the optical fingerprint sensing circuit includes a first TFT device and a photosensitive device, and a channel layer of the first TFT device is disposed right under a portion of the bottom electrode layer. A fingerprint sensing function can be realized by the self-luminous display pixel, and an overall structure of the self-luminous display pixel can be optimized.

The present disclosure provides a ray detection substrate, a manufacturing method thereof and a ray detection device, in the field of display technology. The ray detection substrate comprises: a basal substrate, wherein the basal substrate is provided with a photodiode, the photodiode includes two doped layers and an intrinsic layer located between the two doped layers, and an arrangement direction of the two doped layers is parallel with the basal substrate. The present disclosure solves the problems that the X-ray detection device is poor in performance and improves the performance of the X-ray detection device. The present disclosure is applied to a ray detection device.

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

An imaging panel having a plurality of pixels, for picking up scintillation light obtained by converting X-ray projected from an X-ray source, with use of a scintillator, includes photodiodes, TFTs, and an organic film. The photodiodes are provided at the pixels, respectively, for receiving the scintillation light and converting the same into charges. The TFTs are provided at the pixels, respectively, for reading the charges obtained through the conversion by the photodiodes. In one pixel area of the pixels, an area where the organic film is not provided exists in a layer at an upper position with respect to the TFTs, other than an area where a contact hole CH1 for connecting the photodiode and the drain electrode is provided.

In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

The invention relates to a planar photodiode 1 including a detection portion 10 made of a germanium-based material M0, and a peripheral lateral portion 3 including several materials stacked on top of one another, including a material M1 having a coefficient of thermal expansion lower than that of the material M0, and a material M2 having a coefficient of thermal expansion higher than or equal to that of the material M0. The intermediate region 13 includes a portion P1 surrounded by the material M1 and having tensile stresses. It also includes a portion P2 surrounded by the material M2 and having compressive stresses. This portion P2 surrounds a n doped box 12.

The present disclosure provides an image sensor panel and a method for capturing graphical information using the image sensor panel. In one aspect, the image sensor panel includes a substrate and a sensor array on the substrate, the sensor array including a plurality of photosensitive pixels. The substrate includes a first region defined by the sensor array and a second region other than the first region. The second region is optically transparent and has an area greater than that of the first region.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.