A multispectral imaging device comprises a hybrid semiconductor device of stacked type to separate different light wavebands in a three-dimensional space, said hybrid semiconductor device comprises: a first photodiode, to convert NIR light photons to electrons, said first photodiode forming a detecting array of infrared light image, said first photodiodes comprising a substrate and an depletion layer; and a second photodiode, arranged on said first photodiode, to convert visible light photons to electrons, said second photodiode forming a detecting array of visible light image. The multispectral imaging device provided by the present disclosure decreases the cross-talk between different photodiodes and increases the total performance.

Provided is a technique with which detection defects due to a higher resistance of bias lines can be suppressed. An active matrix substrate 1 has a plurality of detection circuitry arranged in matrix. Each of the detection circuitry includes a photoelectric conversion layer 15; a pair of a first electrode 14a and a second electrode 14b between which the photoelectric conversion layer 15 is interposed; an insulating film 106 covering a side end portion of the photoelectric conversion layer 15; a bias line 16 that is provided on the insulating film 106, and applies a bias voltage to the second electrode 14b; and a protection film 17 that is provided on the insulating film 106, covers a surface of the bias line 16, and contains a conductive material having resistance against acid. At least at a part of the second electrode 14b covers the protection film 17.

A photo detector device is provided. The photo detector device includes a substrate, a first metal layer, a first interlayer dielectric layer, an active layer, a photodiode, and a second metal layer. The first metal layer is disposed on the substrate, wherein the first metal layer includes a gate line and a gate, and the gate is electrically connected to the gate line. The first interlayer dielectric layer is disposed on the first metal layer. The active layer is electrically insulated from the gate and partially overlaps the gate. The photodiode is disposed on the substrate. The second metal layer is disposed on the first interlayer dielectric layer, wherein the second metal layer includes a data line and a bias line, and the bias line is disposed on the photodiode.

The present application provides a display panel and a display device. The display panel is divided into a plurality of pixel regions, a thin film transistor is disposed in a pixel region of the plurality of pixel regions, and a gate line and a data line intersect between adjacent ones of the plurality of pixel regions. A photodiode is provided in at least one of an area corresponding to the thin film transistor in the pixel region, an area corresponding to the gate line, or an area corresponding to the data line, and the photodiode is electrically connected to the gate line or the data line.

Provided is an optical device in which an Si cap layer is provided on a Ge layer, and which is capable of effectively reducing dark current, while having a good effect on prevention of production line contamination by Ge. One embodiment of the optical device according to the present invention is provided with: a semiconductor layer which contains Ge and has a (001) surface and a facet surface between the (001) surface and a (110) surface; and a cap layer which is formed from Si, and which is formed on the (001) surface and the facet surface of the semiconductor layer. The ratio of the film thickness of the cap layer on the facet surface to the film thickness of the cap layer on the (001) surface is 0.4 or more; and the film thickness of the cap layer on the (001) surface is from 9 nm to 30 nm (inclusive).

An X-ray detector device includes in one example a switching portion and a photodetecting portion connected to the switching portion. The photodetecting portion includes a bottom electrode, a semiconductor area disposed above the bottom electrode, and a top electrode disposed above the semiconductor area. The area of the top electrode is smaller than the area of a top surface of the semiconductor area.

In order to improve the performance of a semiconductor device, a semiconductor layer EP is formed over a p-type semiconductor PR. An n-type semiconductor layer NR1 is formed over the semiconductor layer EP. The semiconductor layer PR, the semiconductor layer EP, and the semiconductor layer NR1 respectively configure part of a photoreceiver. A cap layer of a material different from that of the semiconductor layer EP is formed over the semiconductor layer EP, and a silicide layer, which is a reaction product of a metal and the material included in the cap layer, is formed within the cap layer. A plug having a barrier metal film BM1 is formed over the cap layer through the silicide layer. Here, a reaction product of the metal and the material included in the semiconductor layer NR1 is not formed within the semiconductor layer NR1.

The present invention discloses a display panel, the manufacturing method of the display panel, and a display device. The display panel comprises a first substrate with a display area and a non-display area, wherein the display area comprises a plurality of transistors, and a light sensor is adjacent to the plurality of transistors.

Provided is an X-ray imaging panel in which leakage current in a photoelectric conversion layer can be suppressed, and a method for producing the same. An imaging panel 1 generates an image based on scintillation light obtained from X-rays transmitted through an object. The imaging panel 1 includes, on a substrate 101, a thin film transistor 13, an insulating film 103 covering the thin film transistor 13, a photoelectric conversion layer 15 that converts the scintillation light into charges, an upper electrode 14b, a lower electrode 14a connected with the thin film transistor 13, and an upper electrode protection film 18 covering the upper electrode 14b. Ends of the upper electrode 14b are arranged in such a manner that each end thereof is arranged on an inner side of the photoelectric conversion layer 15 with respect to a corresponding end of the photoelectric conversion layer 15. Ends of the upper electrode protection film 18 are arranged in such a manner that each end thereof is arranged between a corresponding end of the upper electrode 14b and a corresponding end of the photoelectric conversion layer 15.

An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.