A photoelectric conversion device includes: a substrate; a photoelectric conversion element provided on the substrate; a first protective layer provided on the photoelectric conversion element; and a second protective layer provided above the substrate and surrounding the photoelectric conversion element and the first protective layer, the second protective layer being lower in water vapor transmittance than the first protective layer. The second protective layer has an upper end positioned above an upper end of the first protective layer.

Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

According to embodiments of the present invention, a photodiode detector is provided. The photodiode detector includes an optical cavity including an overlying light-receiving portion and an underlying minor; and a GeSn absorption layer. The GeSn absorption layer may be disposed within the optical cavity and arranged between the overlying light-receiving portion and the underlying mirror. The overlying light-receiving portion may be configured to receive light to be detected by the photodiode detector. According to further embodiments of the present invention, a method of fabricating a photodiode detector is also provided.

An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

An image sensor (32) includes a plurality of pixel sensing portion (320) that are arranged in columns and rows. Each of the pixel sensing portions (320) includes a thin film transistor (11), and a photodetection diode (13) including n-type (16), intrinsic (15), and p-type semiconductor layers (14). The intrinsic semiconductor layer (15) of the photodetection diode (13) of each of the pixel sensing portions (320) has a crystallinity gradient that varies from an amorphous silicon structure to a microcrystalline silicon structure along a first direction (L1) extending from the p-type semiconductor layer (14) toward the n-type semiconductor layer (16). An image sensing-enabled display apparatus (3) and a method of making the image sensor (32) are also disclosed.

A photoelectric conversion device for detecting the spot size of incident light, includes a photoelectric conversion element having a photoelectric conversion substrate with two main surfaces, and first and second sensitivity section sections; and scanners that relatively scan incident light on the main surfaces of the photoelectric conversion element. When a sensitivity region on a main surface of the first sensitivity section is defined as a first sensitivity region and sensitivity regions that appear on a main surface of the second sensitivity sections are defined as second sensitivity regions, the first sensitivity region receives at least part of the light incident on the main surface during scanning, and has a pattern in which, in accordance with enlargement of an irradiation region irradiated with incident light on the main surface, the proportion of the first sensitivity region with respect to the second sensitivity regions in the irradiation region is decreased.

A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

An imaging panel includes an imaging element that is formed on a substrate. The imaging element includes a gate line, a source line, a switching element, a photoelectric conversion element, and a bias line. The gate line and the source line are formed in a layer in which a part of the switching element is formed, a layer in which a part of the photoelectric conversion element is formed, or a layer in which the bias line is formed.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

According to one embodiment, a detection device includes a substrate, a photoelectric conversion element provided on the substrate and including a semiconductor layer, a transistor provided to correspond to the photoelectric conversion element, and a green color filter provided above the photoelectric conversion element.