Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
31/00
Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Load children Filter patents View analytics View as hierarchy Open in page
H01L31/08
in which radiation controls flow of current through the device, e.g. photoresistors
Load children Filter patents View analytics View as hierarchy Open in page
H01L31/10
characterised by potential barriers, e.g. phototransistors
Load children Filter patents View analytics View as hierarchy Open in page
H01L31/101
Devices sensitive to infrared, visible or ultraviolet radiation
Load children Filter patents View analytics View as hierarchy Open in page
H01L31/112
characterised by field-effect operation, e.g. junction field-effect phototransistor
Load children Filter patents View analytics View as hierarchy Open in page
H01L31/1123
the device being a photo MESFET
Filter patents View analytics View as hierarchy Open in page

H01L31/1123

MSM ULTRAVIOLET RAY RECEIVING ELEMENT, MSM ULTRAVIOLET RAY RECEIVING DEVICE
20180358500 · 2018-12-13 · ·

An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains Al.sub.XGa.sub.(1-X)N (0.4X0.90). The second nitride semiconductor layer contains Al.sub.YGa.sub.(1-Y)N with a film thickness t (nm) satisfying 5t25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy 0.009t+X+0.220.03Y0.009t+X+0.22+0.03.