A terahertz wave detection device includes a low-dimensional electron system material formed on a substrate; and a first electrode and a second electrode opposingly arranged on a two-dimensional plane of the low-dimensional electron system material. The first electrode and the second electrode are made of metals having different thermal conductivity. An 8-element array sensor includes eight terahertz wave detection devices aligned in an array. The terahertz wave detection device includes carbon nanotube film; a first electrode disposed on one side of the carbon nanotube film; and a second electrode disposed on the other side of the carbon nanotube film. The first electrode and the second electrode have different thermal conductivity.

An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.

A terahertz wave detection device includes a low-dimensional electron system material formed on a substrate; and a first electrode and a second electrode opposingly arranged on a two-dimensional plane of the low-dimensional electron system material. The first electrode and the second electrode are made of metals having different thermal conductivity. An 8-element array sensor includes eight terahertz wave detection devices aligned in an array. The terahertz wave detection device includes carbon nanotube film; a first electrode disposed on one side of the carbon nanotube film; and a second electrode disposed on the other side of the carbon nanotube film. The first electrode and the second electrode have different thermal conductivity.

Disclosed is a depth sensor that includes a pixel. The pixel includes a photo transistor, a first transfer transistor connected to the photo transistor, a first floating diffusion area connected to the first transfer transistor, a second transfer transistor connected to the photo transistor, a storage element connected to the second transfer transistor, a third transfer transistor connected to the storage element, and a second floating diffusion area connected to the third transfer transistor.

A visible light communication sensor and visible light communication method are provided. The visible light communication sensor includes a comparator, a sensing unit, and a first ramp signal generator. The comparator includes a first input terminal, a second input terminal, and an output terminal. The sensing unit is coupled to the first input terminal of the comparator. The sensing unit is configured to sense a visible light communication signal to output a sensing signal to the first input terminal of the comparator. The first ramp signal generator is coupled to the second input terminal of the comparator and is configured to output the first ramp signal to the second input terminal of the comparator. The comparator outputs a comparison result signal via the output terminal according to the voltage values of the first input terminal and the second input terminal.

A sensing device including a semiconductor substrate, a filtering structure and a sensing structure is provided. The semiconductor substrate has a sample excitation region and an optical sensor region. The optical sensor region laterally encircles the sample excitation region. The filtering structure is embedded in the semiconductor substrate. The filtering structure is located in the sample excitation region and has a sample containing portion. The sample containing portion is adapted to contain a sample and receive an excitation beam. The sensing structure is embedded in the semiconductor substrate. At least a portion of the sensing structure is disposed in the optical sensor region and the sensing structure at least laterally encircles the filtering structure. After the excitation beam is transmitted to the sample containing portion along a direction perpendicular to a surface of the semiconductor substrate and excites the sample, the sample is adapted to emit a signal beam, and the sensing structure is adapted to sense the signal beam.

Example photoconductive devices and example methods for using photoconductive devices are described. An example method may include providing a photoconductive device having a metal-semiconductor-metal structure. The method may also include controlling, based on a first input state, illumination of the photoconductive device by a first optical beam during a time period, and controlling, based on a second input state, illumination of the photoconductive device by a second optical beam during the time period. Further, the method may include detecting an amount of current produced by the photoconductive device during the time period, and based on the detected amount of current, providing an output indicative of the first input state and the second input state. The example devices can be used individually as discrete components or in integrated circuits for memory or logic applications.

A visible light communication sensor is provided. The visible light communication sensor includes a sensing module, an image data readout circuit, and a visible light communication data readout circuit. The sensing module includes a plurality of pixel units arranged in an array. When the sensing module performs an image sensing operation, a first portion of the pixel units performs an image sensing operation, and the image data readout circuit is idle. When the sensing module performs a visible light communication operation, a second portion of the plurality of pixel units receives a visible light communication signal, so that the visible light communication data readout circuit outputs the visible light communication data, and the image data readout circuit performs an analog-to-digital conversion on a plurality of image sensing signals outputted by the first portion of the plurality of pixel units performed in the image sensing operation to output image sensing data.

A sensing apparatus adapted to detect samples is provided. The sensing apparatus includes a light source, a light-penetrating medium, a metal thin film, and a plurality of sensors. The light source is adapted to provide a light beam. The light-penetrating medium has an optical surface. The metal thin film is disposed on the optical surface of the light-penetrating medium. The samples are adapted to be placed on the metal thin film. After the light beam enters the light-penetrating medium from a side away from the optical surface, the light beam is adapted to be totally internally reflected at the optical surface, such that surface plasmon resonance occurs at a surface of the metal thin film to excite the samples. The samples are adapted to emit signal light beams after being excited. The plurality of sensors are adapted to sense the signal light beams. The metal thin film is disposed between the plurality of sensors and the light-penetrating medium.

A sensing device including a semiconductor substrate, a filtering structure and a sensing structure is provided. The semiconductor substrate has a sample excitation region and an optical sensor region. The optical sensor region laterally encircles the sample excitation region. The filtering structure is embedded in the semiconductor substrate. The filtering structure is located in the sample excitation region and has a sample containing portion. The sample containing portion is adapted to contain a sample and receive an excitation beam. The sensing structure is embedded in the semiconductor substrate. At least a portion of the sensing structure is disposed in the optical sensor region and the sensing structure at least laterally encircles the filtering structure. After the excitation beam is transmitted to the sample containing portion along a direction perpendicular to a surface of the semiconductor substrate and excites the sample, the sample is adapted to emit a signal beam, and the sensing structure is adapted to sense the signal beam.