A method for adjusting an optical system is provided, including a positioning device positioning a first optical module; a measuring device measuring an angular difference between a main axis of the first optical module and an optical axis of an optical element sustained by the first optical module to obtain a measurement information; an adjusting device changing the shape of an adjustment assembly of the first optical module according to the measurement information; and assembling the first optical module with an optical object, wherein the optical axis of the optical element is parallel to a central axis of the optical object.

A unit pixel arranged along with a display pixel in each pixel of a display panel is provided. The unit pixel may include a thin-film transistor (TFT) photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent substrate, and at least one transistor electrically coupled to the TFT photodetector and configured to generate a voltage output from photocurrent generated from the active layer.

The system can generally have a substrate, a layered structure supported by the substrate, the layered structure including a first layer being of a first material electrically conductive and transparent to said electromagnetic radiation, a second layer being of a second material electrically conductive and having a first photocurrent generation spectrum covering a first band of energy levels, a middle layer of a third material having a second photocurrent generation spectrum covering a second band of the energy levels of the electromagnetic radiation, the second band complementing the first band; the layered structure connected via the first layer and second layer as an electrical component of an electrical circuit of an acquisition module.

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

According to one embodiment, an optical sensor device includes an insulating substrate, a first conductive layer and an optical sensor element disposed between the insulating substrate and the first conductive layer. The optical sensor element is electrically connected to the first conductive layer and covered by the first conductive layer. The optical sensor element includes a first semiconductor layer formed of an oxide semiconductor and controls an amount of charge flowing to the first conductive layer according to an amount of incident light to the first semiconductor layer.

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

A display panel and a display device are provided. In the display panel, an upconversion material layer is configured to convert interactive light from a first wave band into a second wave band. A light-sensing transistor of a light-sensing circuit is configured to convert a light intensity signal of the interactive light into an electrical signal after the wave band of the interactive light is converted. A position-detecting circuit is configured to identify a position where the interactive light is irradiated according to the electrical signal. Therefore, the display panel can interact with light having relatively long wavelengths.

A device for sensing light includes a first semiconductor region doped with a dopant of a first type and a second semiconductor region doped with a dopant of a second type. The second semiconductor region is positioned above the first semiconductor region. The device includes a gate insulation layer; a gate, a source, and a drain. The second semiconductor region has a top surface that is positioned toward the gate insulation layer and a bottom surface that is positioned opposite to the top surface of the second semiconductor region. The second semiconductor region has an upper portion that includes the top surface of the second semiconductor region and a lower portion that includes the bottom surface of the second semiconductor region and is mutually exclusive with the upper portion. The first semiconductor region is in contact with both the upper portion and the lower portion of the second semiconductor region.

A photosensitive field-effect transistor which can be configured to provide an electrical response when illuminated by electromagnetic radiation incident on the transistor. The field-effect transistor has a channel (13) made from a two-dimensional material and comprises a photoactive layer (22) which can be configured to donate charge carriers to the transistor channel (13) when electromagnetic radiation is absorbed in the photoactive layer (22). The photosensitive field-effect transistor comprises a top electrode (21) which is in contact with the photoactive layer on one or more contact areas which together form a contact pattern. With a suitably patterned top electrode (21), a voltage applied to the electrode can function as an electrical shutter which can switch the photosensitive field-effect transistor between a light-sensitive state and a light-immune state.