A photodetector device to act as an artificial photonic synapse includes a substrate and a perovskite quantum dot-multiwall carbon nanotube (PQD-MWCNT) hybrid material. The PQD-MWCNT hybrid material channel is disposed on the substrate between a first electrode and a second electrode and forms a PQD-MWCNT channel. The PDQs comprise a methylammonium lead bromide material. A method of operating the photodetector device as an artificial photonic synapse includes applying a presynaptic signal as stimuli as one or more light pulses on the PQD-MWCNT channel between the first electrode and the second electrode. A current across the PQD-MWCNT channel is measured to represent a postsynaptic signal.

An optical member driving mechanism is provided, including a movable portion, a fixed portion, and a driving assembly. The movable portion is connected to an optical member. The movable portion is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move relative to the fixed portion.

A photosensitive module is provided. The photosensitive module includes a base, an integrated package substrate, and a photosensitive element. The integrated package substrate is connected to the base. The integrated package substrate has a plurality of first electronic components, and the first electronic components are housed inside the integrated package substrate without being exposed to external environment. The photosensitive element is connected to the integrated package substrate, and the photosensitive element is configured to receive a light beam traveling along an optical axis.

A switching device includes an insulated gate bipolar transistor (IGBT) or MOSFET having a gate, an emitter, and a collector configured to allow current to pass between the emitter and the collector based on voltage applied to the gate. A stack of alternating layers of photo-sensitive p-n junction layers and insulating layers stacked on the gate for optical switching control of voltage through the IGBT or MOSFET.

Provided herein are MXene-containing photodetectors and related methods. Also provided are MXene-containing THz polarizers as well as MXene-containing MOSFETs, MESFETs, and HEMFETs.

A photo sensor circuit includes: a photo transistor; a first switching transistor; a second switching transistor; and a capacitance element. The photo transistor includes: a gate connected to a first wiring; a source connected to a second wiring; and a drain. The first switching transistor includes: a gate connected to a third wiring; a source connected to a fourth wiring; and a drain connected to the drain of the photo transistor. The capacitance element includes: a first terminal connected to the drain of the photo transistor; and a second terminal connected to the source of the first switching transistor. The second switching transistor includes: a gate connected to a gate line; a source connected to a signal line; and a drain connected to the first terminal of the capacitance element. The photo transistor, first switching transistor, and second transistor each include an oxide semiconductor layer as a channel layer.

This invention includes quantum dot channel (QDC) Si FETs, which detect infrared radiation to serve as photodetectors. GeOx-cladded Ge quantum dots form the quantum dot channel. An assembly of cladded quantum dots, such as Ge and Si, with thin barrier layers (GeOx and SiOx) form a quantum dot superlattice (QDSL). A QDSL exhibits narrow energy widths of sub-bands (or mini-energy bands) with sub-bands separation ranging ˜0.2-0.5 eV. The energy separation depends on the barrier thickness (˜0.5-1 nm) and diameter of quantum dots (3-5 nm). Drain current magnitude in a QDSL layer or quantum dot channel depends on density of electrons in the QD inversion channel, which in turn depends on number of sub-bands participating in the conduction for a given drain voltage VD and gate voltage VG. Infrared photons with energy corresponding to the intra sub-band separation are absorbed as electrons in a lower sub-band make transition to the upper sub-band.

A thin-film transistor (TFT) photodetector for a display panel is provided. The TFT photodetector includes an amorphous transparent substrate used as the display panel, a source formed of amorphous silicon or polycrystalline silicon on the transparent substrate, a drain formed of amorphous silicon or polycrystalline silicon, opposite to the source on the transparent substrate, an active layer formed between the source and the drain and having a current channel formed between the source and the drain, an insulating oxide film formed on the source, the drain, and the active layer, and a light receiving part formed on the insulating oxide film and configured to absorb light. When light is incident on the light receiving part, electrons migrate by tunneling through the insulating oxide film between the light receiving part and the active layer which have been excited with the insulating oxide film in between, the amount of charge in the light receiving part is changed by the migration of the electrons, a threshold voltage of the current channel is changed due to the change of the amount of charge, and photocurrent flows through the current channel due to the change of the threshold voltage.

A touch screen panel using a thin film transistor (TFT) photodetector includes a touch panel including a plurality of unit patterns for sensing light reflected by a touch by using a TFT photodetector including an active layer formed of amorphous silicon or polycrystalline silicon on an amorphous transparent material, and a controller configured to scan the plurality of unit patterns and read touch coordinates as a result of the scanning.

The present disclosure provides a display panel, a display device and manufacturing method of the display panel. The display panel includes a display area and a peripheral area located at a periphery of the display area, a light transmittance region is provided in the peripheral region; at least one first sub-pixels is provided at positions corresponding to the light transmittance regions, wherein at least one of the first sub-pixels is provided with a first thin film transistor, the first thin film transistor is connected with the first gate line, the first data line, and the first pixel electrode, wherein the first gate line is floating; a first pixel electrode is disposed in at least one of the first sub-pixels; and at least one first sensing electrode has an orthogonal projection on a base substrate partially overlapped with an orthogonal projection of the at least one first sub-pixel.