A manufacturing method of a semiconductor device includes stacking a first film on a first substrate and stacking a third film and a second film on a second substrate; joining a main surface on an opposite side of the first substrate of the first film and a main surface on an opposite side of the second substrate of the second film; emitting infrared laser light from a side of the second substrate in such a manner that a focal point is placed in a vicinity of the second film; and peeling off the second substrate. Absorptance of the infrared laser light of the second film is higher than absorptance of the infrared laser light of the second substrate, and a thermal expansion coefficient of the third film is different from a thermal expansion coefficient of a film in contact with the third film.

The present invention provides a semiconductor chip delamination device for peeling off a protective film attached to one surface of a semiconductor chip, including: a stage unit (400) configured to allow a ring frame, in which the semiconductor chip having the protective film attached thereto is disposed, to be seated thereon; a delamination feeding unit (300) configured to feed a delamination seal contactable with the protective film so as to peel off the protective film from the semiconductor chip; a covering unit (500, 600) configured to allow the delamination seal to cover the semiconductor chip such that the delamination seal comes into close contact with the protective film; and a delaminating unit (700) configured to peel off, from the semiconductor chip, the delamination seal disposed to cover the semiconductor chip having the protective film disposed on one surface thereof, and provides a method of controlling the semiconductor chip delamination device.

A method for bonding chips including the following steps: a) providing a donor substrate wherein chips are formed, the donor substrate including a front face and a back face, b) mounting the front face of the donor substrate to a temporary substrate, by direct bonding, c) preferably thinning the donor substrate, d) bonding the assembly consisting of donor substrate and temporary substrate on a handling device including a solid frame and an adhesive film, with the back face of the donor substrate bonded to the adhesive film, e) separating the temporary substrate from the donor substrate, f) cutting the donor substrate so as to singularize the chips, g) bonding the chips to the receiver substrate by direct bonding.