The present invention relates to a method and apparatus for manufacturing a plurality of electronic circuits, each electronic circuit comprising a respective flexible first portion, comprising a respective group of contact pads (contacts), and a respective flexible integrated circuit, IC, comprising a respective group of terminals and mounted on the respective group of contact pads with each terminal in electrical contact with a respective contact pad, the method comprising: providing (e.g. manufacturing) a flexible first structure comprising the plurality of first portions; providing (e.g. manufacturing) a second structure comprising the plurality of flexible ICs and a common support arranged to support the plurality of flexible ICs; dispensing an adhesive onto the first structure and/or onto the flexible ICs; transferring said flexible ICs from the common support onto the flexible first structure such that each group of terminals is mounted on (brought into electrical contact with) a respective group of contact pads to form an electronic circuit, providing a heated surface and an opposing surface together having a gap therebetween, transferring the flexible first structure, comprising the electronic circuits, between the heated surface and the opposing surface such that the adhesive is cured by application of heat and pressure from the heated surface and the opposing surface thereby adhering the IC onto the respective first portion.

A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.

A semiconductor packaging apparatus and methods of manufacturing semiconductor devices using the same. The semiconductor packaging apparatus includes a process unit, and a controller associated with the process unit. The process unit includes a bonding part that bonds a semiconductor substrate and a carrier substrate to each other to form a bonded substrate, a cooling part that cools the bonded substrate, and a detection part in the cooling part and configured to detect a defect of the bonded substrate. The controller is configured to control the process unit using data obtained from the detection part.

An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

Provided are microelectronics substrates and methods of manufacturing and using the microelectronics substrate. An example of a microelectronics substrate includes a carrier, a silicate bonding layer, and a flexible substrate, wherein the flexible substrate is bonded to the silicate bonding layer. The microelectronics substrate comprises a peel strength between the flexible substrate and silicate bonding layer; wherein the peel strength between the flexible substrate and the silicate bonding layer is below 1 kgf/m.

An electronic device (e.g., a diode) is provided that includes a substrate and a patterned layer of superconducting material disposed over the substrate. The patterned layer forms a first electrode, a second electrode, and a loop coupling the first electrode with the second electrode by a first channel and a second channel. The first channel and the second channel have different minimum widths. For a range of current magnitudes, when a magnetic field is applied to the patterned layer of superconducting material, the conductance from the first electrode to the second electrode is greater than the conductance from the second electrode to the first electrode.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

The present invention relates to a method and apparatus for manufacturing a plurality of electronic circuits, each electronic circuit comprising a respective flexible first portion, comprising a respective group of contact pads (contacts), and a respective flexible integrated circuit, IC, comprising a respective group of terminals and mounted on the respective group of contact pads with each terminal in electrical contact with a respective contact pad, the method comprising:

providing (e.g. manufacturing) a flexible first structure comprising the plurality of first portions;

providing (e.g. manufacturing) a second structure comprising the plurality of flexible ICs and a common support arranged to support the plurality of flexible ICs;

dispensing an adhesive onto the first structure and/or onto the flexible ICs;

transferring said flexible ICs from the common support onto the flexible first structure such that each group of terminals is mounted on (brought into electrical contact with) a respective group of contact pads to form an electronic circuit,

providing a heated surface and an opposing surface together having a gap therebetween,

transferring the flexible first structure, comprising the electronic circuits, between the heated surface and the opposing surface such that the adhesive is cured by application of heat and pressure from the heated surface and the opposing surface thereby adhering the IC onto the respective first portion.

A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.