Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.

A semiconductor device according to an embodiment comprises a first chip and a second chip. The first chip includes a first wire, a first connection pad electrically connected to the first wire, and a first dummy pad. The second chip includes a second wire, a second connection pad electrically connected to the second wire and joined to the first connection pad, and a second dummy pad joined to the first dummy pad. A thickness of the first dummy pad is smaller than a thickness of the first connection pad and a thickness of the second dummy pad is also smaller than a thickness of the second connection pad, or the thickness of the first dummy pad is smaller than the thickness of the first connection pad or the thickness of the second dummy pad is smaller than the thickness of the second connection pad.

In some examples, a chip scale package (CSP) comprises a semiconductor die; a passivation layer abutting the semiconductor die; a via extending through the passivation layer; and a first metal layer abutting the via. The CSP also includes an insulation layer abutting the first metal layer, with the insulation layer having an orifice with a maximal horizontal area of less than 32400 microns.sup.2. The CSP further includes a second metal layer abutting the insulation layer and adapted to couple to a solder ball. The second metal layer abuts the first metal layer at a point of contact defined by the orifice in the insulation layer.

A chip structure, a packaging structure and a manufacturing method of the chip structure are provided. The chip structure includes a base and an electrically conductive interconnection layer. An upper surface of the base is provided with a plurality of bonding pads, and at least two of the bonding pads have same properties. The electrically conductive interconnection layer includes a plurality of electrically conductive interconnection structures. The electrically conductive interconnection structure electrically connects the bonding pads having same properties, and is configured to be electrically connected with a pin on a packaging substrate.

A metal-oxide semiconductor module includes multiple metal-oxide semiconductor components separated from one another by at least one first trench. Each of the metal-oxide semiconductor components includes a heavily doped semiconductor layer which includes a drain region, an epitaxial layer which is formed with an indentation such that the drain region is partially exposed from the epitaxial layer, and a metallic patterned contact unit. The epitaxial layer also includes a source region and a gate region that are spaced-apart formed therein. The metallic patterned contact unit includes source, gate, and drain patterned contacts which are electrically connected to the source, gate, and drain regions, respectively. A light-emitting diode display device including the metal-oxide semiconductor module is also disclosed.

A metal-oxide semiconductor module includes multiple metal-oxide semiconductor components separated from one another by at least one first trench. Each of the metal-oxide semiconductor components includes a heavily doped semiconductor layer which includes a drain region, an epitaxial layer which is formed with an indentation such that the drain region is partially exposed from the epitaxial layer, and a metallic patterned contact unit. The epitaxial layer also includes a source region and a gate region that are spaced-apart formed therein. The metallic patterned contact unit includes source, gate, and drain patterned contacts which are electrically connected to the source, gate, and drain regions, respectively. A light-emitting diode display device including the metal-oxide semiconductor module is also disclosed.

Wafer processing techniques, or methods for forming semiconductor rides, are disclosed for fabricating plated pillar dies having die-level electromagnetic interference (EMI) shield layers. In embodiments, the method includes depositing a metallic seed layer over a semiconductor wafer and contacting die pads thereon. An electroplating process is then performed to compile plated pillars on the metallic seed layer and across the semiconductor wafer. Following electroplating, selected regions of the metallic seed layer are removed to produce electrical isolation gaps around a first pillar type, while leaving intact portions of the metallic seed layer to yield a wafer-level EMI shield layer. The semiconductor wafer is separated into singulated plated pillar dies, each including a die-level EMI shield layer and plated pillars of the first pillar type electrically isolated from the EMI shield layer.

The present disclosure relates to a semiconductor device with tilted insulating layers and a method for fabricating the semiconductor device with the tilted insulating layers. The semiconductor device includes a substrate, two conductive pillars positioned above the substrate and extended along a vertical axis, a first set of tilted insulating layers parallel to each other and positioned between the two conductive pillars, and a second set of tilted insulating layers parallel to each other and positioned between the two conductive pillars. The first set of tilted insulating layers are extended along a first direction slanted with respect to the vertical axis, the second set of tilted insulating layers are extended along a second direction slanted with respect to the vertical axis, and the first direction and the second direction are crossed.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.

An interconnection structure of a semiconductor chip may include an interconnection via, a lower pad, a conductive bump, and an upper pad. The interconnection via may be arranged in the semiconductor chip. The lower pad may be arranged on a lower end of the interconnection via exposed through a lower surface of the semiconductor chip. The conductive bump may be arranged on the lower pad. The upper pad may be arranged on an upper end of the interconnection via exposed through an upper surface of the semiconductor chip. The upper pad may have a width wider than a width of the interconnection via and narrower than a width of the lower pad. Thus, an electrical short between the conductive bumps may not be generated in the interconnection structure having a thin thickness.