A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.

A semiconductor module may include a semiconductor chip; a first electrode body; and a second electrode body; wherein the semiconductor chip may include a semiconductor substrate; a first electrode layer that is in contact with a center portion of a first surface of the semiconductor substrate and is out of contact with a peripheral portion of the first surface; and a second electrode layer that is in contact with a center portion of a second surface of the semiconductor substrate and is out of contact with a peripheral portion of the second surface, the second surface being located on an opposite side with respect to the first surface, the first electrode body is connected to the first electrode layer via a first solder layer, and the second electrode body is connected to the second electrode layer via a second solder layer.

Bonded surfaces are formed by adhering first nanorods and second nanorods to respective first and second surfaces. The first shell is formed on the first nanorods and the second shell is formed on the second nanorods, wherein at least one of the first nanorods and second nanorods, and the first shell and the second shell are formed of distinct metals. The surfaces are then exposed to at least one condition that causes the distinct metals to form an alloy, such as eutectic alloy having a melting point below the temperature at which the alloy is formed, thereby bonding the surfaces upon which solidification of the alloy.

The disclosed embodiments of electronic packages include electrical contact pad features present on all sides of the package that facilitate simple and low cost electrical connections to the package made through a mechanical contacting scheme. In an embodiment, an electronic package comprises: a metal leadframe having a first leadframe portion having a first thickness and a second leadframe portion having a second thickness that is less than the first thickness, the second leadframe portion defining electrical contact pads; a silicon die attached to the second leadframe portion and overlying a space formed in the leadframe by the first and second leadframe portions; and wirebonds coupling the silicon die to the electrical contact pads. A method of fabricating the electronic package is also disclosed.

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.

A semiconductor device includes: a semiconductor die having a metal region; a substrate having a metal region; and a soldered joint between the metal region of the semiconductor die and the metal region of the substrate. One or more intermetallic phases are present throughout the entire soldered joint, each of the one or more intermetallic phases formed from a solder preform diffused into the metal region of the semiconductor die and the metal region of the substrate. The soldered joint has the same length-to-width aspect ratio as the semiconductor die.

A semiconductor package structure includes a first semiconductor wafer including a first bonding pad. The semiconductor package structure also includes a second semiconductor wafer including a second bonding pad and a third bonding pad. The second bonding pad and the third bonding pad are bonded to the first bonding pad of the first semiconductor wafer. The semiconductor package structure further includes a first via penetrating through the second semiconductor wafer to physically contact the first bonding pad of the first semiconductor wafer. A portion of the first via is disposed between the second bonding pad and the third bonding pad.

An apparatus and a method for controlling a cooling fan of a vehicle are capable of preventing a fan motor from being damaged by locking the fan motor in cold weather conditions. The apparatus includes: a fan motor driving the cooling fan; and a controller generating an operation signal for controlling the cooling fan and providing the operation signal to the fan motor, where the controller confirms an ignition-off time for which an ignition was turned off when the ignition is turned on, confirms a change rate of an air conditioner refrigerant pressure for a measurement time when the ignition-off time exceeds a decision-possible time and an intake air temperature is present within a predetermined temperature, and locks the fan motor depending on the change rate of the air conditioner refrigerant pressure.

A semiconductor device includes a chip stack structure including a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip. The first semiconductor chip includes a first substrate, a first circuit layer on a front surface of the first substrate, and a first connecting layer disposed on the first circuit layer and including a first metal pad electrically connected to the first circuit layer. The second semiconductor chip includes a second substrate, a second circuit layer on a front surface of the second substrate, and a second connecting layer disposed on the second circuit layer and including a second metal pad electrically connected to the second circuit layer. The first connecting layer faces the second connecting layer. The first and second metal pads are in contact with each other to couple the first and second semiconductor chips to each other.