A semiconductor package includes a leadframe including a die pad and a plurality of lead terminals. A vertical semiconductor device is attached on a first side by a die attach material to the die pad. A first clip is on the first vertical device that is solder connected to a terminal of the first vertical device on a second side opposite to the first side providing a first solder bonded interface, wherein the first clip is connected to at least a first of the lead terminals. The first solder bonded interface includes a first protruding surface standoff therein that extends from a surface on the second side of the first vertical device to physically contact the first clip.

A semiconductor device includes: a substrate; a semiconductor chip disposed adjacent to a front surface of the semiconductor substrate; an adhesive fixing a back surface of the semiconductor chip to the front surface of the substrate; and a plurality of spacers disposed to regulate a distance between the substrate and the semiconductor chip. The spacers are bonded to the front surface of the substrate or the back surface of the semiconductor chip, and are located on respective vertexes of a polygon surrounding a center of gravity of the semiconductor chip.

Micro pillars are formed in silicon. The micro pillars are used in boding the silicon to hetero-material such as III-V material, ceramics, or metals. In bonding the silicon to the hetero-material, indium is used as a bonding material and attached to the hetero-material. The bonding material is heated and the silicon and the hetero-material are pressed together. As the silicon and the hetero-material are pressed together, the micro pillars puncture the bonding material. In some embodiments, pedestals are used in the silicon as hard stops to align the hetero-material with the silicon.

A curable resin or adhesive composition includes at least one monomer, a photoinitiator capable of initiating polymerization of the monomer when exposed to light, and at least one energy converting material, preferably a phosphor, capable of producing light when exposed to radiation (typically X-rays). The material is particularly suitable for bonding components at ambient temperature in situations where the bond joint is not accessible to an external light source. An associated method includes: placing a polymerizable adhesive composition, including a photoinitiator and energy converting material, such as a down-converting phosphor, in contact with at least two components to be bonded to form an assembly; and, irradiating the assembly with radiation at a first wavelength, capable of conversion (down-conversion by the phosphor) to a second wavelength capable of activating the photoinitiator, to prepare items such as inkjet cartridges, wafer-to-wafer assemblies, semiconductors, integrated circuits, and the like.

The present technology relates to a camera module and an electronic apparatus that can lower the risk of breakage. An imaging element has a light receiving surface to receive light, and is flip-chip mounted on a base. A joining material is joined to the optical back surface of the imaging element so that a space is formed between the joining material and a back-surface-side member provided on the side of the optical back surface on the opposite side of the imaging element from the light receiving surface. The present technology can be applied to camera modules and the like that capture images, for example.

A bonded assembly including: a first electronic component including a first substrate and a plurality of first electrodes disposed in a pressed area at a first height from a surface of the first substrate; a second electronic component including a second substrate and a plurality of second electrodes disposed at a second height from a surface of the second substrate, a second electrode overlapping with a corresponding first electrode to face the first electrode; a conductive bonding layer disposed between the first electrode and the second electrode overlapped with each other to bond the first electrode and the second electrode; and at least one spacer disposed between the first substrate and the second substrate to overlap the pressed area, the at least one spacer having a thickness that is greater than a value obtained by summing the first height and the second height.

To provide a film which is excellent in releasing property with respect to a resin sealed portion and excellent in low migration property and peeling property with respect to a semiconductor chip, a source electrode or a sealing glass and which is suitable as a mold release film for producing a semiconductor element having a part of the surface of a semiconductor chip, source electrode or sealing glass exposed. A film 1 which comprises a substrate 3 and an adhesive layer 5, wherein the storage elastic modulus at 180 C. of the substrate 3 is from 10 to 100 MPa, and the adhesive layer 5 is a reaction cured product of a composition for adhesive layer comprising a specific acrylic polymer and a polyfunctional isocyanate compound, wherein the number of moles M.sub.OH of hydroxy groups and the number of moles M.sub.COOH of carboxy groups, derived from the acrylic polymer, and the number of moles M.sub.NCO of isocyanate groups derived from the polyfunctional isocyanate compound, satisfy a specific relation, and which is suitable as a mold release film for producing a semiconductor element.

The present invention relates to a bonding method for connecting a first wafer and a second wafer, wherein firstly a first adhesive layer is deposited onto a surface of the first wafer. Furthermore, a second adhesive layer is deposited onto the first adhesive layer, and the two adhesive layers are structured by way of selective removal of both adhesive layers in at least one predefined region of the first wafer, Moreover, the first wafer is connected to the second wafer by way of pressing a surface of the second wafer onto the second adhesive layer, wherein the second adhesive layer is more flowable that the first adhesive layer on connecting the first wafer to the second wafer.

An improvement is achieved in the reliability of a semiconductor device. A first semiconductor chip includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate, an insulating film formed over the wiring structure, and a first insulating film formed over the insulating film. A second semiconductor chip includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate, an insulating film formed over the wiring structure, and a second insulating film formed over the insulating film. The first insulating film forms an uppermost layer of the first semiconductor chip. The second insulating film forms an uppermost layer of the second semiconductor chip. Each of the first and second insulating films is made of a photosensitive resin film having an adhesive property. The first and second semiconductor chips are stacked such that the first insulating film of the first semiconductor chip and the second insulating film of the second semiconductor chip are in contact with each other.

According to an example aspect of the present invention, there is provided a bonding structure for forming at least one electrical connection between a photonic substrate and an optoelectronic component. The bonding structure comprises an electroconductive pad between the photonic substrate and the optoelectronic component. The electroconductive pad comprises at least two separated portions. The bonding structure comprises a bond layer between the electroconductive pad and the optoelectronic component, and between the at least two portions of the electroconductive pad.