H01L2225/06537

Package structure and method for manufacturing thereof

A package structure includes a package, at least one first molding material, and at least one second semiconductor device. The package includes at least one first semiconductor device therein. The package has a top surface. The first molding material is present on the top surface of the package and has at least one opening therein, in which at least a region of the top surface of the package is exposed by the opening of the first molding material. The second semiconductor device is present on the top surface of the package and is molded in the first molding material.

Die packaging with fully or partially fused dielectric leads

A die interconnect system having a first die with a plurality of connection pads, and a ribbon lead extending from the first die, the ribbon lead having a plurality of metal cores with a core diameter, and a dielectric layer surrounding the metal core with a dielectric thickness, with at least a portion of dielectric being fused between adjacent metal cores along the length of the plurality of metal cores, and an outer metal layer attached to ground.

Method of fabricating semiconductor package and semiconductor package

A method of fabricating a semiconductor package includes preparing a panel package including a redistribution substrate, a connection substrate and a plurality of lower semiconductor chips; sawing the panel package to form a plurality of separated strip packages each of which includes the sawed redistribution substrate, at least two of the lower semiconductor chips, and the sawed connection substrate; and providing a plurality of upper semiconductor chips on one of the strip packages to electrically connect the upper semiconductor chips to the sawed connection substrate.

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device

In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.

ELECTRONIC COMPONENT MODULE
20210399084 · 2021-12-23 ·

An electronic component module that includes a substrate, an inductor element, a single-sided functional component, a sealing resin, and an electromagnetic shield. The inductor element is mounted on the substrate. The single-sided functional component is mounted on a base ground conductor and a base signal conductor that are disposed on a side of the inductor element opposite to the substrate. The sealing resin has an insulating property and covers the inductor element, the base ground conductor, the base signal conductor, and the single-sided functional component. The electromagnetic shield covers the sealing resin, and a ground surface of the single-sided functional component.

SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
20210398912 · 2021-12-23 ·

A semiconductor package is disclosed. The semiconductor package may include a substrate, a first semiconductor chip on the substrate, an inner mold layer provided on the substrate to at least partially enclose the first semiconductor chip, an inner shielding layer provided on the substrate to at least partially enclose the inner mold layer, a second semiconductor chip stack on the inner shielding layer, an outer mold layer provided on the substrate to at least partially enclose the inner shielding layer and the second semiconductor chip stack, and an outer shielding layer at least partially enclosing the outer mold layer. Each of the inner and outer shielding layers may include a conductive material, and the inner shielding layer may be electrically connected to a ground pad of the substrate.

EM AND RF MITIGATION SILICON STRUCTURES IN STACKED DIE MICROPROCESSORS FOR DIE TO PLATFORM AND DIE-DIE RF NOISE SUPPRESSION
20210398944 · 2021-12-23 ·

Embodiments disclosed herein include electronic packages and their components. In an embodiment, an electronic package comprises a package substrate and a base die over the package substrate. In an embodiment, the electronic package further comprises a plurality of chiplets over the base die. In an embodiment, the base die comprises a substrate, a first metal layer and a second metal layer between the substrate and the plurality of chiplets, and a third metal layer and a fourth metal layer between the package substrate and the substrate. In an embodiment, a filter is integrated into one or more layers of the base die.

Semiconductor packages having improved thermal discharge and electromagnetic shielding characteristics

A semiconductor package may include a first semiconductor chip on and electrically connected to a wiring substrate, an intermediate layer on the first semiconductor chip and covering an entire surface of the first semiconductor chip, a second semiconductor chip on the intermediate layer and electrically connected to the wiring substrate, a mold layer on the wiring substrate and covering the first semiconductor chip and the second semiconductor chip, the mold layer including one or more inner surfaces defining a mold via hole that exposes a portion of a surface of the intermediate layer, an electromagnetic shielding layer on the one or more inner surfaces of the mold layer and further on one or more outer surfaces of the mold layer, and a thermal discharge layer on the electromagnetic shielding layer in the mold via hole, such that the thermal discharge layer fills the mold via hole.

MICROELECTRONIC DEVICE PACKAGES WITH EMI SHIELDING, METHODS OF FABRICATING AND RELATED ELECTRONIC SYSTEMS
20210384159 · 2021-12-09 ·

This patent application relates to microelectronic device packages with internal EMI shielding, methods of fabricating and related electronic systems. One or more microelectronic devices of a package including multiple microelectronic devices are EMI shielded, and one or more other microelectronic devices of the package are located outside the EMI shielding.

VERTICAL DIE-TO-DIE INTERCONNECTS BRIDGE
20210384130 · 2021-12-09 ·

The present disclosure relates to a semiconductor package that may include a substrate. The substrate may have a top surface and a bottom surface. The semiconductor package may include an opening in the substrate. The semiconductor package may include a bridge disposed in the opening. The bridge may have an upper end at the top surface of the substrate and a lower end at the bottom surface of the substrate. The semiconductor package may include a first die on the top surface of the substrate at least partially extending over a first portion of the upper end of the bridge. The semiconductor package may include a second die on the bottom surface of the substrate at least partially extending over the lower end of the bridge. The bridge may couple the first die to the second die.