Stacked semiconductor dies for semiconductor device assemblies and associated methods and systems are disclosed. In some embodiments, the semiconductor die assembly includes a substrate with a first opening in an inner portion and a second opening in an outer portion of the substrate. Further, the semiconductor die assembly can include a master die attached to a front side of the substrate, where the master die includes a first bond pad proximate to the first opening and a second bond pad proximate to the second opening. The first and second bond pads of the master die can be coupled with first and second substrate bond pads on a back side of the substrate, opposite to the front side, using first and second bonding wires extending through the first and second openings, respectively.

A method for manufacturing a semiconductor device includes providing an adhesive film over a first surface of a semiconductor wafer on which a semiconductor device layer and a bump electrically connected to the semiconductor device layer are formed, forming a slit in the adhesive film, fragmenting the semiconductor wafer into semiconductor chips along the slit, and connecting the bump to a wiring of a circuit board within the adhesive film.

A semiconductor device package is provided. The package can include a stack of semiconductor dies over a substrate, the substrate including a plurality of electrical contacts, and an annular interposer disposed over the substrate and surrounding the stack of semiconductor dies. The annular interposer can include a plurality of circuit elements each electrically coupled to at least a corresponding one of the plurality of electrical contacts. The package can further include a lid disposed over the annular interposer and the stack of semiconductor dies.

A PoP semiconductor device has a top semiconductor package disposed over a bottom semiconductor package. The top semiconductor package has a substrate and a first semiconductor die disposed over the substrate. First and second encapsulants are deposited over the first semiconductor die and substrate. A first build-up interconnect structure is formed over the substrate after depositing the second encapsulant. The top package is disposed over the bottom package. The bottom package has a second semiconductor die and modular interconnect units disposed around the second semiconductor die. A second build-up interconnect structure is formed over the second semiconductor die and modular interconnect unit. The modular interconnect units include a plurality of conductive vias and a plurality of contact pads electrically connected to the conductive vias. The I/O pattern of the build-up interconnect structure on the top semiconductor package is designed to coincide with the I/O pattern of the modular interconnect units.

A stacked chip package structure includes a first chip, pillar bumps, a first encapsulant, a first redistribution layer, a second chip, a second encapsulant, a second redistribution layer and a through via. The pillar bumps are disposed on a plurality of first pads of the first chip respectively. The first encapsulant encapsulates the first chip and exposes the pillar bumps. The first redistribution layer is disposed on the first encapsulant and electrically connects the first chip. The second chip is disposed on the first redistribution layer. The second encapsulant encapsulates the second chip. The second redistribution layer is disposed on the second encapsulant and electrically coupled to the second chip. The through via penetrates the second encapsulant and electrically connects the first redistribution layer and the second redistribution layer.

A semiconductor package includes a substrate; and first and second semiconductor chips sequentially disposed on the substrate so that active surfaces of the first and second semiconductor chips face each other, wherein the first and second semiconductor chips are center pad-type semiconductor chips each having I/O pads arranged in two columns to be adjacent to a central line thereof, and I/O pads of the second semiconductor chip are electrically connected directly to the substrate without intersecting the central line of the second semiconductor chip.

The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The semiconductor substrate is thinned. Thinning the semiconductor substrate causes defects to form along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate. Dopants are implanted into the second side of the semiconductor substrate after thinning the semiconductor substrate. The semiconductor substrate is annealed to form a doped layer after implanting the dopants. The doped layer is formed along the second side of the semiconductor substrate.

According to the present invention, a semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface, a first layer formed over the first surface, a second layer thicker than the first layer formed over the first portion of the first layer, the first and second layers being formed of a same material, a first semiconductor chip mounted over a second portion of the first layer; and a second semiconductor chip commonly mounted over the first semiconductor chip and the second layer.

Separate inter-die connectors for data and error correction information and related apparatuses, methods, and computing systems are disclosed. An apparatus including a master die, a target die, inter-die data connectors, and inter-die error correction connectors. The target die includes data storage elements. The inter-die data connectors electrically couple the master die to the target die. The inter-die data connectors are configured to conduct write data bits from the master die to the target die. The write data bits are written to the data storage elements. The inter-die error correction connectors electrically couple the master die to the target die. The inter-die error correction connectors are configured to conduct error correction information corresponding to the write data bits from the master die to the target die. The target die includes error correction circuitry configured to generate new error correction information responsive to the write data bits received from the master die.

Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Conductors may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The conductors may be in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device and between the conductors and the second semiconductor device. An encapsulant distinct from the dielectric material may cover the conductors, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate. Methods of fabrication are also disclosed.