Patent classifications
H01L2225/06558
SEMICONDUCTOR PACKAGE ASSEMBLY
The invention provides a semiconductor package assembly. The semiconductor package assembly includes a substrate having a first pad and a second pad thereon. A logic die is mounted on the substrate. The logic die includes a first logic die pad coupled to the first pad. A memory die is mounted on the substrate. The memory die includes a first memory die pad. A first redistribution layer (RDL) trace has a first terminal and a second terminal. The first terminal is coupled to the first pad through the first memory die pad. The second terminal is coupled to the second pad rather than the first pad.
WIRING BOARD WITH ELECTRICAL ISOLATOR AND BASE BOARD INCORPORATED THEREIN AND SEMICONDUCTOR ASSEMBLY AND MANUFACTURING METHOD THEREOF
A wiring board includes an electrical isolator laterally surrounded by a base board and a molding compound. The electrical isolator is inserted into a through opening of the base board and has a thickness greater than that of the base board. The molding compound covers the top side of the base board and sidewalls of the electrical isolator, and provides a reliable interface for deposition of a routing circuitry thereon. The base board can serve as an alignment guide for isolator placement or/and provide another routing to enhance electrical routing flexibility for the wiring board.
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
A semiconductor device is disclosed. The semiconductor device includes: a first die including a signal pad region and a power pad region; a redistribution layer (RDL) over the first die; a plurality of first connectors over the RDL and at a side of the RDL opposite to the first die; a plurality of second connectors over the RDL and at the side opposite to the first die; a second die including a signal pad region and a power pad region, wherein the second die is face-to-face and electrically connected to the first die through the first connectors and the RDL, wherein a center of the second die is laterally shifted with respect to a center of the first die so as to correspond the signal pad region of the first die to the signal pad region of the second die. An associated method for fabricating the same is also disclosed.
Package-on-package assembly with wire bond vias
A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.
Semiconductor package and fabrication method thereof
A semiconductor package includes a first logic die, a second logic die disposed in close proximity to the first logic die, a bridge memory die coupled to both the first logic die and the second logic die, a redistribution layer (RDL) structure coupled to the first logic die and the second logic die, and a molding compound at least partially encapsulating the first logic die, the second logic die, and the bridge memory die. The first logic die and the second logic die are coplanar.
INTEGRATED CIRCUIT (IC) PACKAGES EMPLOYING SPLIT, DOUBLE-SIDED METALLIZATION STRUCTURES TO FACILITATE A SEMICONDUCTOR DIE ("DIE") MODULE EMPLOYING STACKED DICE, AND RELATED FABRICATION METHODS
Integrated circuit (IC) packages employing split, double-sided IC metallization structures to facilitate a semiconductor die module employing stacked dice, and related fabrication methods are disclosed. Multiple IC dice in the IC package are stacked and bonded together in a back-to-back, top and bottom IC die configuration in an IC die module, which can minimize the height of the IC package. The metallization structure is split between separate top and bottom metallization structures adjacent to respective top and bottom surfaces of the IC die module to facilitate die-to-die and external electrical connections to the dice. The top and bottom metallization structures can be double-sided by exposing substrate interconnects on respective inner and outer surfaces for respective die and external electrical interconnections. In other aspects, a compression bond is included between the IC dice mounted together in a back-to-back configuration to further minimize the overall height of the IC package.
SEMICONDUCTOR PACKAGE
A packaged integrated circuit device includes a substrate having a surface thereon. A spacer and a first semiconductor chip are provided at spaced-apart locations on a first portion of the surface of the substrate. This first portion of the surface of the substrate has a lateral area equivalent to a sum of: (i) a lateral footprint of the spacer, (ii) a lateral footprint of the first semiconductor chip, and (iii) an area of an entire lateral space between the spacer and the first semiconductor chip. A stack of second semiconductor chips is provided, which extends on the spacer and on the first semiconductor chip. The stack of second semiconductor chips has a lateral footprint greater than the lateral area of the first portion of the surface of the substrate so that at least a portion of the stack of second semiconductor chips overhangs at least one sidewall of at least one of the spacer and the first semiconductor chip, which extend between the stack of second semiconductor chips and the surface of the substrate.
Memories and memory components with interconnected and redundant data interfaces
A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. Each DRAM component includes multiplexers that allow either of the data interfaces to write data to or read data from a common set of memory banks, and to selectively relay write and read data to and from other components, bypassing the local banks. Delay elements can impose selected read/write delays to align read and write transactions from and to disparate DRAM components.
PROTECTION OF INTEGRATED CIRCUITS
A first integrated circuit chip is assembled to a second integrated circuit chip with a back-to-back surface relationship. The back surfaces of the integrated circuit chips are attached to each other using one or more of an adhesive, solder or molecular bonding. The back surface of at least one the integrated circuit chips is processed to include at least one of a trench, a cavity or a saw cut.
SIDE CONTACT PADS FOR HIGH-SPEED MEMORY CARD
A memory card includes a memory card body dimensioned to house at least one integrated circuit die package. The memory card body, in certain embodiments, includes a first surface spaced apart from a second surface and a plurality of side surfaces connecting the first surface to the second surface. The memory card also includes a contact pad disposed on at least one side surface of the plurality of side surfaces. The contact pad includes a first conductive layer, a second conductive layer, and an insulating layer disposed between the first conductive layer and the second conductive layer.