Provided is a semiconductor package, including a lower semiconductor chip, a plurality of semiconductor chips that are disposed on the lower semiconductor chip in a first direction perpendicular to a top surface of the lower semiconductor chip, a plurality of nonconductive layers disposed between the plurality of semiconductor chips, a nonconductive pattern that extends from the nonconductive layers and is disposed on lateral surfaces of at least one of the plurality of semiconductor chips, a first mold layer disposed a top surface of the nonconductive pattern, and a second mold layer disposed a lateral surface of the nonconductive pattern and a lateral surface of the first mold layer, wherein the nonconductive pattern and the first mold layer are disposed between the second mold layer and lateral surfaces of the plurality of semiconductor chips.

A 3D semiconductor device including: a first single crystal layer with first transistors; overlaid by a first metal layer; a second metal layer overlaying the first metal layer and being overlaid by a third metal layer; a logic gates including at least the first metal layer interconnecting the first transistors; second transistors disposed atop the third metal layer; third transistors disposed atop the second transistors; a top metal layer disposed atop the third transistors; and a memory array including word-lines, and at least four memory mini arrays, where each of the memory mini arrays includes at least four rows by four columns of memory cells, where each of the memory cells includes at least one of the second transistors or third transistors, sense amplifier circuit(s) for each of the memory mini arrays, the second metal layer provides a greater current carrying capacity than the third metal layer.

An electronic structure, an electronic package structure and method of manufacturing an electronic device are provided. The electronic structure includes a carrier and a protection layer. The carrier includes a first pad, a second pad and a first dielectric layer. The first pad is at a side of the carrier and configured to bond with a conductive pad. The second pad is at the side of carrier and configured to electrically connect an exterior circuit. The first dielectric layer includes a first portion around the first pad and a second portion around the second pad, wherein a top surface of the first portion and a top surface of the second portion are substantially coplanar. The protection layer is on the second pad and covers the second pad.

A semiconductor package includes a first base plate, first semiconductor structure, second base plate and filling layer. The first base plate has a first surface including first and second signal transmission regions. The first semiconductor structure located on the first surface is electrically connected to the first signal transmission region. The second base plate located on the first base plate includes a base and a first interconnection surface. The first interconnection surface is away from the first surface. The first interconnection surface has first and second interconnection regions communicated with each other. The first interconnection region is electrically connected to the second signal transmission region. The filling layer seals the first semiconductor structure, second base plate and first surface. The first interconnection region is not sealed, and the second interconnection region is. There is a preset height between a top surface of the filling layer and the first interconnection region.

A semiconductor package including a first stack; a plurality of TSVs passing through the first stack; a second stack on the first stack and including a second surface facing a first surface of the first stack; a first pad on the first stack and in contact with the TSVs; a second pad on the second stack; a bump connecting the first and second pads; a first redundancy pad on the first surface of the first stack, spaced apart from the first pad, and not in contact with the TSVs; a second redundancy pad on the second surface of the second stack and spaced apart from the second pad; and a redundancy bump connecting the first redundancy pad and the second redundancy pad, wherein the first pad and first redundancy pad are electrically connected to each other, and the second pad and second redundancy pad are electrically connected to each other.

A semiconductor package according to the inventive concept includes a first semiconductor chip configured to include a first semiconductor device, a first semiconductor substrate, a plurality of through electrodes penetrating the first semiconductor substrate, and a plurality of first chip connection pads arranged on an upper surface of the first semiconductor substrate; a plurality of second semiconductor chips sequentially stacked on an upper surface of the first semiconductor chip and configured to each include a second semiconductor substrate, a second semiconductor device controlled by the first semiconductor chip, and a plurality of second chip connection pads arranged on an upper surface of the second semiconductor substrate; a plurality of bonding wires configured to connect the plurality of first chip connection pads to the plurality of second chip connection pads; and a plurality of external connection terminals arranged on a lower surface of the first semiconductor chip.

A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a package substrate having a first surface and a second surface opposite to the first surface. Several integrated devices are bonded to the first surface of the package substrate. A first underfill element is disposed over the first surface and surrounds the integrated devices. A first molding layer is disposed over the first surface and surrounds the integrated devices and the first underfill element. A semiconductor die is bonded to the second surface of the package substrate. A second underfill element is disposed over the second surface and surrounds the semiconductor die. A second molding layer is disposed over the second surface and surrounds the semiconductor die and the second underfill element. Several conductive bumps are disposed over the second surface and adjacent to the second molding layer.

A semiconductor package includes an interposer including first and second surfaces opposite to each other. The semiconductor package also includes a heat dissipation layer disposed on the first surface of the interposer and a first semiconductor die mounted on the first surface of the interposer. The semiconductor package additionally includes a stack of second semiconductor dies mounted on the second surface of the interposer. The semiconductor package further includes a thermally conductive connection part for transferring heat from the stack of the second semiconductor dies to the heat dissipation layer.

A semiconductor package includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip; an underfill material layer interposed between the first semiconductor chip and the second semiconductor chip; and a first dam structure disposed on the first semiconductor chip. The first dam structure extends along an edge of the second semiconductor chip and includes unit dam structures apart from each other with a slit therebetween. A vertical level of an upper surface of the first dam structure is located between a vertical level of a lower surface of the second semiconductor chip and a vertical level of an upper surface of the second semiconductor chip. A first sidewall of the first dam structure is in contact with the underfill material layer and includes a flat surface parallel to a sidewall of the second semiconductor chip that faces the first sidewall of the first dam structure.

Electronic device package technology is disclosed. An electronic device package in accordance with the present disclosure can include a substrate, a plurality of electronic components in a stacked relationship, and an encapsulant material encapsulating the electronic components. Each of the electronic components can be electrically coupled to the substrate via a wire bond connection and spaced apart from an adjacent electronic component to provide clearance for the wire bond connection. The encapsulant can be disposed between center portions of adjacent electronic components. Associated systems and methods are also disclosed.