An embodiment includes an apparatus comprising: a substrate; a first die including a processor core; a second die not including a processor core; and a third die including memory cells; wherein: (a)(i) the first die has a smaller minimum pitch than the second die; (a)(ii) a first vertical axis intersects the substrate and the first and second dies but not the third die; and (a)(iii) a second vertical axis intersects the substrate and the second and third dies but not the first die. Other embodiments are described herein.

A semiconductor device includes a first substrate structure including a first substrate, circuit devices, first interconnection lines, bonding metal layers on upper surfaces of the first interconnection lines, and a first bonding insulating layer on the upper surfaces of the first interconnection lines and on lateral surfaces of the bonding metal layers, and a second substrate structure on the first substrate structure, and including a second substrate, gate electrodes, channel structures, second interconnection lines, bonding vias connected to the second interconnection lines and the bonding metal layers and having a lateral surface that is inclined such that widths of the bonding vias increase approaching the first substrate structure, and a second bonding insulating layer in contact with at least lower portions of the bonding vias. The bonding metal layers include dummy bonding metal layers not connected to the bonding vias and that contacts the second bonding insulating layer.

A semiconductor device includes a substrate that includes a first surface, a first semiconductor chip that includes a second surface facing the first surface of the substrate and a third surface opposite to the second surface, each of the second and third surfaces having a rectangular shape that includes a plurality of sides and has surface areas that are different, and a second semiconductor chip disposed on the first surface of the substrate on one side of the first semiconductor chip. When viewed in a first direction substantially perpendicular to the substrate, one of the sides of the third surface that is closest to the second semiconductor chip overlaps an interior portion of the second semiconductor chip.

A microelectronic unit can include a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can also include a microelectronic element having a top surface adjacent the inner surface, a bottom surface remote from the top surface, and a plurality of contacts at the top surface. The microelectronic unit can also include terminals electrically connected with the contacts of the microelectronic element. The terminals can be electrically insulated from the carrier structure. The microelectronic unit can also include a dielectric region contacting at least the bottom surface of the microelectronic element. The dielectric region can define a planar surface located coplanar with or above the front surface of the carrier structure.

Apparatuses relating to a microelectronic package are disclosed. In one such apparatus, a substrate has first contacts on an upper surface thereof. A microelectronic die has a lower surface facing the upper surface of the substrate and having second contacts on an upper surface of the microelectronic die. Wire bonds have bases joined to the first contacts and have edge surfaces between the bases and corresponding end surfaces. A first portion of the wire bonds are interconnected between a first portion of the first contacts and the second contacts. The end surfaces of a second portion of the wire bonds are above the upper surface of the microelectronic die. A dielectric layer is above the upper surface of the substrate and between the wire bonds. The second portion of the wire bonds have uppermost portions thereof bent over to be parallel with an upper surface of the dielectric layer.

A method for making a microelectronic unit includes forming a plurality of wire bonds on a first surface in the form of a conductive bonding surface of a structure comprising a patternable metallic element. The wire bonds are formed having bases joined to the first surface and end surfaces remote from the first surface. The wire bonds have edge surfaces extending between the bases and the end surfaces. The method also includes forming a dielectric encapsulation layer over a portion of the first surface of the conductive layer and over portions of the wire bonds such that unencapsulated portions of the wire bonds are defined by end surfaces or portions of the edge surfaces that are unconvered by the encapsulation layer. The metallic element is patterned to form first conductive elements beneath the wire bonds and insulated from one another by portions of the encapsulation layer.

The semiconductor package according to the present invention comprises: an integrated substrate; a bottom chip stack, which is mounted on the integrated substrate, has multiple memory semiconductor dies stacked chip-on-chip, and takes charge of a part of the whole memory capacity; at least one top chip stack, which is mounted on the bottom package, has multiple memory semiconductor dies mounted therein, and takes charge of the rest of the whole memory capacity; an integration wire for electrically connecting the bottom chip stack and the top chip stack(s); and an integration protection member for sealing the integration wire.

A semiconductor package includes a connection layer, a semiconductor chip disposed at a center portion of the connection layer, an adhesive layer disposed on the semiconductor chip, a heat spreader layer disposed on the adhesive layer, and a lower redistribution layer disposed on the connection layer and a bottom surface of the semiconductor chip. A width of the adhesive layer is the same as a width of the semiconductor chip, and a width of the heat spreader layer is less than the width of the adhesive layer.

A semiconductor device assembly is provided. The semiconductor device assembly can include a substrate and one or more semiconductor dies. The semiconductor device assembly can further include a thermally conductive material (e.g., carbon nanotubes, graphene) capable of dissipating heat from the semiconductor device assembly. In doing so, a thermally regulated semiconductor device can be assembled.

An integrated circuit package including a substrate having a cavity and one or more semiconductor devices assembled within the cavity of the substrate. The one or more semiconductor devices electrically coupled using redistribution layers, wherein the cavity is a first cavity, the substrate includes the first cavity and a second cavity, the one or more semiconductor devices are fully embedded within the first cavity of the substrate, the one or more semiconductor devices are fully embedded between the substrate and a first redistribution layer of said redistribution layers, bumps are fully embedded within the second cavity of the substrate, the bumps are fully embedded between the substrate and the first redistribution layer of said redistribution layers, and the first redistribution layer is fully embedded between the substrate and a semiconductor interposer.