A semiconductor package structure includes a substrate, a first redistribution layer, a semiconductor die, a silicon capacitor, and a first bump structure. The first redistribution layer is disposed over the substrate. The semiconductor die is disposed over the first redistribution layer. The silicon capacitor is disposed below the first redistribution layer and is electrically coupled to the semiconductor die, wherein the silicon capacitor includes a semiconductor substrate and a plurality of capacitor cells embedded in the semiconductor substrate. The first bump structure is disposed between the silicon capacitor and the substrate.

A multi-chip package comprising an interconnection substrate; a first semiconductor IC chip over the interconnection substrate, wherein the first semiconductor IC chip comprises a first silicon substrate, a plurality of first metal vias passing through the first silicon substrate, a plurality of first transistors on a top surface of the first silicon substrate and a first interconnection scheme over the first silicon substrate, wherein the first interconnection scheme comprises a first interconnection metal layer over the first silicon substrate, a second interconnection metal layer over the first interconnection layer and the first silicon substrate and a first insulating dielectric layer over the first silicon substrate and between the first and second interconnection metal layers; a second semiconductor IC chip over and bonded to the first semiconductor IC chip; and a plurality of second metal vias over and coupling to the interconnection substrate, wherein the plurality of second metal vias are in a space extending from a sidewall of the first semiconductor IC chip.

A semiconductor package includes a redistribution substrate and a semiconductor chip thereon. The redistribution substrate includes a ground under-bump pattern, signal under-bump patterns laterally spaced apart from the ground under-bump pattern, first signal line patterns disposed on the signal under-bump patterns and coupled to corresponding signal under-bump patterns, and a first ground pattern coupled to the ground under-bump pattern and laterally spaced apart from the first signal line pattern. Each of the signal and ground under-bump patterns includes a first part and a second part formed on the first part and that is wider than the first part. The second part of the ground under-bump pattern is wider than the second part of the signal under-bump pattern. The ground under-bump pattern vertically overlaps the first signal line patterns. The first ground pattern does not vertically overlap the signal under-bump patterns.

A package-on-package (PoP) semiconductor package includes an upper package and a lower package. The lower package includes a first semiconductor device in a first area, a second semiconductor device in a second area, and a command-and-address vertical interconnection, a data input-output vertical interconnection, and a memory management vertical interconnection adjacent to the first area.

In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

A semiconductor package includes: a lower package; and an upper package stacked on the lower package, wherein the lower package includes: a first redistribution structure; a semiconductor chip mounted on the first redistribution structure; a first molding layer surrounding the semiconductor chip on the first redistribution structure; and first vertical connection conductors disposed on the first redistribution structure and vertically passing through the first molding layer, wherein the upper package includes: a second molding layer disposed on the lower package; second vertical connection conductors vertically passing through the second molding layer and electrically connected to the first vertical connection conductors; and an antenna structure disposed on the second molding layer.

An electrical package can include a substrate having a first side and a second side opposite the first side. One or more electrical components mounted to the substrate, and a plurality of electrically conductive interconnect members can be coupled to the second side of the substrate. At least one of the interconnect members can have an elongated shape with a length that is longer than a width. The interconnect member with the elongated shape positioned can be at or proximate one of the corners. The interconnect members can be arranged as a grid, with first interconnect members each occupying a single grid cell, and second interconnect members each occupying at least two grid cells. The second interconnect members can have a shape of two of the first interconnect members coupled by a bridge portion.

Disclosed is a semiconductor module comprising a module substrate having a top surface and a bottom surface that are opposite to each other, a plurality of semiconductor packages on the top surface of the module substrate and arranged in a first direction parallel to the top surface of the module substrate, and a clip structure on the top surface of the module substrate and spaced apart from the plurality of semiconductor packages in the first direction. The clip structure includes a body part on the top surface of the module substrate and spaced apart from the plurality of semiconductor packages in the first direction, and a connection part that extends from the body part across a lateral surface of the module substrate onto the bottom surface of the module substrate.

An embedded module according to the present invention includes a base substrate having a multi-layer wiring, at least two semiconductor chip elements having different element thicknesses, each of the semiconductor chip element having a first surface fixed to the base substrate and having a connection part on a second surface, an insulating photosensitive resin layer enclosing the semiconductor chip elements on the base substrate and being formed by a first wiring photo via, a second wiring photo via, and a wiring, the first wiring photo via electrically connected to the connection part of the semiconductor chip elements, the second wiring photo via arranged at the outer periphery of each of the semiconductor chip elements and electrically connected to a connection part of the base substrate, the wiring arranged so as to be orthogonal to and electrically connected to the first wiring photo via and the second wiring photo via.

A semiconductor package is provided. The semiconductor package may include a first semiconductor die, a second semiconductor die stacked on the first semiconductor die, the second semiconductor die having a width smaller than a width of the first semiconductor die, a third semiconductor die stacked on the second semiconductor die, the third semiconductor die having a width smaller than the width of the first semiconductor die, and a mold layer covering side surfaces of the second and third semiconductor dies and a top surface of the first semiconductor die. The second semiconductor die may include a second through via, and the third semiconductor die may include a third conductive pad in contact with the second through via.