A semiconductor package includes a first semiconductor die, a semiconductor device comprising a second semiconductor die, and one or more wire bond structures. The wire bond structure includes a bond interface portion. The wire bond structure is arranged next to the first semiconductor die. The first semiconductor die and the bond interface portion of the wire bond structure are arranged at the same side of the semiconductor device. An interface contact structure of the semiconductor device is electrically connected to the wire bond structure.

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

A semiconductor package including a chip stack structure, a redistribution layer (RDL) structure and conductive plugs is provided. The chip stack structure includes stacked chips. Each of the chips includes a pad. The pads on the chips are located on the same side of the chip stack structure. The RDL structure is disposed on the first sidewall of the chip stack structure and adjacent to the pads. The conductive plugs penetrate through the RDL structure. The conductive plug is connected to the corresponding pad.

A semiconductor structure includes a die and a first connector. The first connector is disposed on the die. The first connector includes a first connecting housing, a first connecting element and a first connecting portion. The first connecting element is electrically connected to the die and disposed at a first side of the first connecting housing. The first connecting portion is disposed at a second side different from the first side of the first connecting housing, wherein the first connecting portion is one of a hole and a protrusion with respect to a surface of the second side of the first connecting housing.

A semiconductor structure includes a semiconductor package and a connector. The semiconductor package includes a die and a redistribution structure. The redistribution structure is disposed over the die, and includes a plurality of conductive patterns stacking on one another and electrically connected to the die. The connector is disposed on the redistribution structure, and includes a connecting element. The connecting element penetrates the conductive patterns and is electrically connected to the die.

An electronic module can include a first integrated device package comprising a first substrate and an electronic component mounted to the first substrate. A first vertical interconnect can be mounted to and electrically connected to the first substrate. The first vertical interconnect can extend outwardly from the first substrate. The electronic module can include a second integrated device package comprising a second substrate and a second vertical interconnect having a first end mounted to and electrically connected to the second substrate. The second vertical interconnect can have a second end electrically connected to the first vertical interconnect. The first and second vertical interconnects can be disposed between the first and second substrates.

Edge-connected semiconductor systems are described along with methods of making and using the same. First and second integrated circuit packages are obtained, each including a substrate assembly having top and bottom sides and an edge that extends between the top and the bottom sides. Edge contacts are disposed on the edges of the substrate assemblies. A ganged assembly is formed by establishing conductive paths between the edge contacts of the substrate assemblies. The ganged assembly is coupled to a printed circuit board (“PCB”) by coupling host contacts on one or more of the substrate assemblies to corresponding contacts on the PCB.

A semiconductor device includes a first semiconductor die that operates at a first power, a second semiconductor die that is formed in a stack on the first semiconductor die and operates at a second power different than the first power, and a power management semiconductor die that is formed in the stack and provides the first power to the first semiconductor die through a first via and provides the second power to the second semiconductor die through a second via.

A semiconductor package including a chip stack structure, a redistribution layer (RDL) structure and conductive plugs is provided. The chip stack structure includes stacked chips. Each of the chips includes a pad. The pads on the chips are located on the same side of the chip stack structure. The RDL structure is disposed on the first sidewall of the chip stack structure and adjacent to the pads. The conductive plugs penetrate through the RDL structure. The conductive plug is connected to the corresponding pad.

A passive device module includes a first tier, a second tier and connective terminals. The first tier includes a first semiconductor chip and a first encapsulant. The first semiconductor chip has contact posts. The encapsulant encapsulates the first semiconductor chip. The second tier is disposed on the first tier, and includes a second semiconductor chip, through interlayer walls, and a second encapsulant. The through interlayer walls are locate beside and face sidewalls of the second semiconductor chip and are electrically connected to the contact posts. The second encapsulant encapsulates the second semiconductor chip and the through interlayer walls. The connective terminals are disposed over the second tier and are electrically connected to the first semiconductor chip via the through interlayer walls. The first and second semiconductor chips include passive devices.