Patent classifications
H01L2225/1064
SEMICONDUCTOR DEVICES AND SEMICONDUCTOR STRUCTURES
Semiconductor devices and semiconductor structures are disclosed. One of the semiconductor device includes a semiconductor package and a connector. The semiconductor package includes at least one die in a die region, an encapsulant in a periphery region aside the die region and a redistribution structure in the die region and the periphery region. The encapsulant encapsulates the at least one die. The redistribution structure is electrically connected to the die. The connector is disposed on the redistribution structure in the periphery region. The connector includes a plurality of connecting elements, wherein the connector is electrically connected to the redistribution structure through the plurality of connecting elements.
Semiconductor Packages, and Methods for Forming Semiconductor Packages
A semiconductor package includes a first semiconductor die, a semiconductor device comprising a second semiconductor die, and one or more wire bond structures. The wire bond structure includes a bond interface portion. The wire bond structure is arranged next to the first semiconductor die. The first semiconductor die and the bond interface portion of the wire bond structure are arranged at the same side of the semiconductor device. An interface contact structure of the semiconductor device is electrically connected to the wire bond structure.
PACKAGE ON PACKAGE ASSEMBLY
Embodiments herein relate to a package-on-package assembly that may include a first package with the first side coupled to a printed circuit board (PCB) and a second side opposite the first side, a second package coupled with the second side of the first package, where the second package is a leadframe package with one or more leads coupled with the PCB, where the first package and the second package are electrically coupled through the PCB. Other embodiments may be described and/or claimed.
ELECTRONIC MODULE FOR HIGH POWER APPLICATIONS
An electronic module can include a first integrated device package comprising a first substrate and an electronic component mounted to the first substrate. A first vertical interconnect can be mounted to and electrically connected to the first substrate. The first vertical interconnect can extend outwardly from the first substrate. The electronic module can include a second integrated device package comprising a second substrate and a second vertical interconnect having a first end mounted to and electrically connected to the second substrate. The second vertical interconnect can have a second end electrically connected to the first vertical interconnect. The first and second vertical interconnects can be disposed between the first and second substrates.
Laminated interposers and packages with embedded trace interconnects
Laminated interposers and packages, with embedded trace interconnects are provided. An example process for making an interposer or package achieves vertical conductive vias in the package by depositing conductive traces on multiple wafers or panes, then laminating these substrates into a stack, thereby embedding the conductive traces. The laminated stack is sliced to dimensions of an interposer or electronic package. A side of the sliced stack is then used as the top of the interposer or package, rendering some of the horizontally laid traces into vertical conductive vias. The interposer or package can be finished or developed by adding redistribution layers on the top and bottom surfaces, and active and passive components. Electronic components can also be embedded in the laminated stack. Some of the stack layers can be active dies, such as memory controllers, memory storage arrays, and processors, to form a memory subsystem or self-contained computing device.
Packaged semiconductor assemblies and methods for manufacturing such assemblies
Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.
PACKAGE DEVICES HAVING A BALL GRID ARRAY WITH SIDE WALL CONTACT PADS
Package devices (systems and methods for their manufacture) may have an integrated circuit (IC) chip mounted on a top surface of a package substrate of and IC package, and embedded in a mold compound formed onto the top surface. They may also have conductive elements mounted on the top surface of the package substrate, embedded in the mold compound, horizontally disposed at a first vertical sidewall of the package device, and having vertical contact pads exposed at the first vertical sidewall. Conductor material traces of the IC package may electrically couple contacts of the chip to the conductive elements. Traces of the IC package may also electrically couple contacts of the chip to bottom surface contacts of the IC package. The vertical contact pads provide a shorter signal path to another device having vertically mounted surface contacts or opposing contact pads, thus improving signaling to the other device.
Electrical structural member and production method for producing such an electrical structural member
An electrical structural member comprises a first package and a second package. The first package has a first connection frame, a chip disposed in the first connection frame, and a first encapsulation material encapsulating the chip and at least portions of the first connection frame. The second package has a second connection frame and a second encapsulation material encapsulating at least portions of the second connection frame. The first encapsulation material is securely connected to the second encapsulation material.
Package substrate comprising side pads on edge, chip stack, semiconductor package, and memory module comprising same
The semiconductor package according to the present invention comprises: an integrated substrate; a bottom chip stack, which is mounted on the integrated substrate, has multiple memory semiconductor dies stacked chip-on-chip, and takes charge of a part of the whole memory capacity; at least one top chip stack, which is mounted on the bottom package, has multiple memory semiconductor dies mounted therein, and takes charge of the rest of the whole memory capacity; an integration wire for electrically connecting the bottom chip stack and the top chip stack(s); and an integration protection member for sealing the integration wire.
Semiconductor device package with exposed bond wires
A semiconductor device package includes a first substrate having an electrical circuit, semiconductor dies stacked one on top of the other, and bond wires electrically connected one to another. The bond wires electrically couple the semiconductor dies to one another and to the electrical circuit. There is a first bond wire having a first portion connected to a first semiconductor die, a second portion connected to a second semiconductor die, and an intermediate portion between the first portion and second portion. The semiconductor device package further includes a molding compound encapsulating the semiconductor dies, and the first and second portions of the first bond wire. The intermediate portion of the first bond wire is exposed along a top planar surface of the molding compound. The semiconductor device package may be used for coupling one or more other semiconductor device packages thereto via the exposed intermediate portion.