H01L2225/1064

Devices and stacked microelectronic packages with package surface conductors and methods of their fabrication
09960149 · 2018-05-01 · ·

Embodiments of methods for forming a device include performing an oxidation inhibiting treatment to exposed ends of first and second device-to-edge conductors, and forming a package surface conductor to electrically couple the exposed ends of the first and second device-to-edge conductors. Performing the oxidation inhibiting treatment may include applying an organic solderability protectant coating to the exposed ends, or plating the exposed ends with a conductive plating material. The method may further include applying a conformal protective coating over the package surface conductor. An embodiment of a device formed using such a method includes a package body, the first and second device-to-edge conductors, the package surface conductor on a surface of the package body and extending between the first and second device-to-edge conductors, and the conformal protective coating over the package surface conductor.

ELECTRONIC SYSTEM HAVING INCREASED COUPLING BY USING HORIZONTAL AND VERTICAL COMMUNICATION CHANNELS
20180102353 · 2018-04-12 · ·

An electronic system supports superior coupling by implementing a communication mechanism that provides at least for horizontal communication for example, on the basis of wired and/or wireless communication channels, in the system. Hence, by enhancing vertical and horizontal communication capabilities in the electronic system, a reduced overall size may be achieved, while nevertheless reducing complexity in printed circuit boards coupled to the electronic system. In this manner, overall manufacturing costs and reliability of complex electronic systems may be enhanced.

SEMICONDUCTOR DEVICE INCLUDING POWER MANAGEMENT DIE IN A STACK AND METHODS OF FORMING THE SAME
20240387470 · 2024-11-21 ·

A semiconductor device includes a first semiconductor die that operates at a first power, a second semiconductor die that is formed in a stack on the first semiconductor die and operates at a second power different than the first power, and a power management semiconductor die that is formed in the stack and provides the first power to the first semiconductor die through a first via and provides the second power to the second semiconductor die through a second via.

Sidewall connections and button interconnects for molded SiPs

Electronic modules and methods of fabrication are described. In an embodiment, an electronic module includes a molded system-in-package, and a flexible circuit mounted on a side surface of a molding compound layer such that the flexible circuit is in electrical contact with a lateral interconnect exposed along the side surface of the molding compound layer.

VERTICAL SEMICONDUCTOR PACKAGE INCLUDING HORIZONTALLY STACKED DIES AND METHODS OF FORMING THE SAME
20240371841 · 2024-11-07 ·

A semiconductor package includes a first connection die including a semiconductor substrate and an interconnect structure, and a first die stack disposed on the first connection die and including stacked dies, each of the stacked dies including a semiconductor substrate and an interconnect structure including a first connection line that is electrically connected to the interconnect structure of the first connection die. An angle formed between a plane of the first connection die and a plane of each stacked die ranges from about 45 to about 90.

INTERCONNECT STRUCTURE FOR A MICROELECTRONIC DEVICE

A microelectronic package with two semiconductor die coupled on opposite sides of a redistribution layer 108, and at least partially overlapping with one another. At least a first of the semiconductor die includes two sets of contacts, the first group of contacts arranged at a lesser pitch relative to one another than are a second group of contacts. The first group of contacts at the larger pitch are placed to engage contacts in a redistribution layer 108. The second group of contacts at the lesser pitch are placed to engage respective contacts at the same pitch on the second semiconductor die.

Packaged semiconductor assemblies and methods for manufacturing such assemblies

Packaged semiconductor assemblies including interconnect structures and methods for forming such interconnect structures are disclosed herein. One embodiment of a packaged semiconductor assembly includes a support member having a first bond-site and a die carried by the support member having a second bond-site. An interconnect structure is connected between the first and second bond-sites and includes a wire that is coupled to at least one of the first and second bond-sites. The interconnect structure also includes a third bond-site coupled to the wire between the first and second bond-sites.

Module stacking mechanism with integrated ground
09899358 · 2018-02-20 · ·

Printed circuit board (PCB) structures and methods of assembling them are described herein. In some embodiments, a PCB structure may include a first mounting hole; first, second, and third projections radiating from the first mounting hole; and a second mounting hole adjacent to the third projection. The first and second mounting holes located at opposite ends of the third projection. The second mounting hole to cause an electrical coupling of a bottom integrated circuit (IC) module to a connection structure included in a PCB, and the first mounting hole, the first projection, and the second projection to cause positioning of a top IC module above the bottom IC module and electrical coupling of the top IC module to the connection structure.

MICROELECTRONIC PACKAGES AND ASSEMBLIES WITH REPEATERS
20180040589 · 2018-02-08 ·

A microelectronic assembly includes a circuit panel having a plurality of first contacts at a major surface thereof. One or more microelectronic packages comprise a plurality of microelectronic elements, the one or more packages having terminals electrically coupled with the first contacts, wherein each package includes at least one microelectronic element having a face, and element contacts at the face which are electrically coupled with the plurality of terminals. A repeater (redriver or retimer) assembly is configured to condition one or more signals received from a memory channel control element including one or more signals selected from: an address signal, a command signal, or a data signal, such that the plurality of the microelectronic elements are coupled to the at least one repeater assembly to receive the conditioned signals.

Vertical Memory Module Enabled by Fan-Out Redistribution Layer

Vertical memory modules enabled by fan-out redistribution layer(s) (RDLs) are provided. Memory dies may be stacked with each die having a signal pad directed to a sidewall of the die. A redistribution layer (RDL) is built on sidewalls of the stacked dies and coupled with the signal pads. The RDL may fan-out to UBM and solder balls, for example. An alternative process reconstitutes dies on a carrier with a first RDL on a front side of the dies. The dies and first RDL are encapsulated, and the modules vertically disposed for a second reconstitution on a second carrier. A second RDL is applied to exposed contacts of the vertically disposed modules and first RDLs. The vertical modules and second RDL are encapsulated in turn with a second mold material. The assembly may be singulated into individual memory modules, each with a fan-out RDL on the sidewalls of the vertically disposed dies.