A semiconductor device and method utilizing a dummy structure in association with a redistribution layer is provided. By providing the dummy structure adjacent to the redistribution layer, damage to the redistribution layer may be reduced from a patterning of an overlying passivation layer, such as by laser drilling. By reducing or eliminating the damage caused by the patterning, a more effective bond to an overlying structure, such as a package, may be achieved.

A package includes a building block. The building block includes a device die, an interposer bonded with the device die, and a first encapsulant encapsulating the device die therein. The package further includes a second encapsulant encapsulating the building block therein, and an interconnect structure over the second encapsulant. The interconnect structure has redistribution lines electrically coupling to the device die. A power module is over the interconnect structure. The power module is electrically coupled to the building block through the interconnect structure.

An electronic module can include a first integrated device package comprising a first substrate and an electronic component mounted to the first substrate. A first vertical interconnect can be mounted to and electrically connected to the first substrate. The first vertical interconnect can extend outwardly from the first substrate. The electronic module can include a second integrated device package comprising a second substrate and a second vertical interconnect having a first end mounted to and electrically connected to the second substrate. The second vertical interconnect can have a second end electrically connected to the first vertical interconnect. The first and second vertical interconnects can be disposed between the first and second substrates.

A semiconductor package includes a first die, a second die, an encapsulating material, and a redistribution structure. The second die is disposed over the first die and includes a plurality of bonding pads bonded to the first die, a plurality of through vias extending through a substrate of the second die and a plurality of alignment marks, wherein a pitch between adjacent two of the plurality of alignment marks is different from a pitch between adjacent two of the plurality of through vias. The encapsulating material is disposed over the first die and at least laterally encapsulating the second die. The redistribution structure is disposed over the second die and the encapsulating material and electrically connected to the plurality of through vias.

A semiconductor packaging method, a semiconductor assembly and an electronic device are disclosed herein. The semiconductor packaging method comprises forming a first-level assembly, including: align and fix at least one first-level device to a target position on a carrier plate by utilizing the self-alignment capability of first-level alignment solder joints; encapsulating the at least one first-level device to form a molded package body; and exposing the first-level interconnect terminals from the molded package body. The packaging method further comprises align and fix a second-level device to a target position on the first-level assembly by utilizing the self-alignment capability of second-stage alignment solder joints between the first-level assembly and the second-level device. The packaging method improves the operation speed and accuracy of the picking and placing of the first-level device and the second-level device, resulting in improved process efficiency and reduced process cost.

A method includes encapsulating a device die in an encapsulating material, forming a first dielectric layer over the device die and the encapsulating material, forming first redistribution lines extending into the first dielectric layer to electrically couple to the device die, forming an alignment mark over the first dielectric layer, wherein the alignment mark includes a plurality of elongated strips, forming a second dielectric layer over the first redistribution lines and the alignment mark, and forming second redistribution lines extending into the second dielectric layer to electrically couple to the first redistribution lines. The second redistribution lines are formed using the alignment mark for alignment.

A package includes a building block. The building block includes a device die, an interposer bonded with the device die, and a first encapsulant encapsulating the device die therein. The package further includes a second encapsulant encapsulating the building block therein, and an interconnect structure over the second encapsulant. The interconnect structure has redistribution lines electrically coupling to the device die. A power module is over the interconnect structure. The power module is electrically coupled to the building block through the interconnect structure.

An apparatus comprising a package comprising a first side to interface with at least one chip; and a second side to interface with a circuit board, the second side opposite to the first side, wherein the second side comprises a non-stepped portion comprising a first plurality of conductive contacts; and a stepped portion that protrudes from the non-stepped portion, the stepped portion comprising a second plurality of conductive contacts.

A semiconductor package device includes a first semiconductor package, a second semiconductor package, and first connection terminals between the first and second semiconductor packages. The first semiconductor package includes a lower redistribution substrate, a semiconductor chip, and an upper redistribution substrate vertically spaced apart from the lower redistribution substrate across the semiconductor chip. The upper redistribution substrate includes a dielectric layer, redistribution patterns vertically stacked in the dielectric layer and each including line and via parts, and bonding pads on uppermost redistribution patterns. The bonding pads are exposed from the dielectric layer and in contact with the first connection terminals. A diameter of each bonding pad decreases in a first direction from a central portion at a top surface of the upper redistribution substrate to an outer portion at the top surface thereof. A thickness of each bonding pad increases in the first direction.

A semiconductor package includes a substrate, first and second semiconductor chip structures on the substrate and spaced apart from each other in a first horizontal direction, a mold layer on the substrate and covering both the first and second semiconductor chip structures, and a supporting structure on the mold layer and distal from the upper surface of the substrate than both the first and second semiconductor chip structures in a vertical direction. The supporting structure includes first and second supporting portions, spaced apart from each other in a second horizontal direction that is perpendicular to the first horizontal direction and the vertical direction. Each of the first and second supporting portions has a bar shape or a linear shape extending in the first horizontal direction. At least one of the first supporting portion or the second supporting portion overlaps the first and second semiconductor chips in the vertical direction.