A method of forming a semiconductor package includes receiving a carrier, coating the carrier with a bonding layer, forming a first insulator layer over the bonding layer, forming a backside redistribution layer over the first insulator layer, forming a second insulator layer over the backside redistribution layer, patterning the second insulator layer to form a recess that extends through the second insulator layer and to the backside redistribution layer, filling the recess with a solder, and coupling a surface-mount device (SMD) to the solder.

The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

The present disclosure relates to thin-form-factor reconstituted substrates and methods for forming the same. The reconstituted substrates described herein may be utilized to fabricate homogeneous or heterogeneous high-density 3D integrated devices. In one embodiment, a silicon substrate is structured by direct laser patterning to include one or more cavities and one or more vias. One or more semiconductor dies of the same or different types may be placed within the cavities and thereafter embedded in the substrate upon formation of an insulating layer thereon. One or more conductive interconnections are formed in the vias and may have contact points redistributed to desired surfaces of the reconstituted substrate. The reconstituted substrate may thereafter be integrated into a stacked 3D device.

A board having an electronic component embedded therein, includes a core layer having a groove with a bottom surface, an electronic component disposed above the bottom surface of the groove and spaced apart from the bottom surface of the groove, and an insulating layer disposed on the core layer and covering at least a portion of the electronic component. The insulating layer is disposed in at least a portion of a space between the bottom surface of the groove and the electronic component.

A device that includes a board, a package and a patch substrate. The board includes a cavity. The package is coupled to a first side of the board. The package includes a substrate and an integrated device coupled to the substrate. The integrated device is located at least partially in the cavity of the board. The patch substrate is coupled to a second side of the board. The patch substrate is located over the cavity of the board. The patch substrate is configured as an electromagnetic interference (EMI) shield for the package.

A fan-out semiconductor package includes a frame including a plurality of wiring layers electrically connected to each other and having a recess portion having a bottom surface on which a stopper layer is disposed, a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, the inactive surface being disposed in the recess portion to face the stopper layer, an encapsulant covering at least a portion of the frame and at least a portion of the semiconductor chip, the encapsulant being disposed in at least a portion of the recess portion, and a connection structure disposed on the frame and the active surface and including a redistribution layer electrically connected to the plurality of wiring layers and the connection pad. A thickness of the stopper layer is greater than a thickness of each of the plurality of wiring layers.

Certain aspects of the present disclosure provide apparatus and techniques for partially molding packages for integrated circuits. A packaged assembly for integrated circuits includes: a substrate having at least one mold barrier between a first region on a first surface of the substrate and a second region on the first surface; a die attached to the substrate; one or more components attached to the substrate in the first region; and a first encapsulant over the one or more components in the first region, wherein the at least one mold barrier is configured to block a portion of the first encapsulant from moving from the first region of the substrate to the second region of the substrate during an application of the first encapsulant.

Provided is a semiconductor package of a package on package (PoP) type having an improved electromagnetic wave shielding property. The semiconductor package includes: a first sub-package including a first package base substrate on which a first semiconductor chip is mounted, and an electromagnetic wave shielding member having a top portion and side portions respectively at a top surface and side surfaces of the first sub-package, wherein a groove space extends inward from a bottom surface of the first sub-package; and a second sub-package including a second package base substrate in the groove space and on which a second semiconductor chip is mounted, wherein the second sub-package is connected to the first sub-package through an inter-package connection terminal attached to a first package connection pad at a bottom surface of the groove space of the first sub-package.

A printed circuit board including: an insulating material having a bump pad embedded in a first surface thereof; a first insulating layer stacked on the first surface of the insulating material and including an opening portion exposing the bump pad; a second insulating layer stacked on the first insulating layer and including a first cavity exposing the opening portion; and a bump disposed on the bump pad in the opening portion.

A semiconductor package includes a base substrate and first to N.sup.th sub packages sequentially stacked over the base substrate with each sub package including a semiconductor die and a bridge die disposed on at least one side of the semiconductor die and electrically connected to the semiconductor die, where N is a natural number equal to or more than two (2). The semiconductor package also includes a molding layer formed on the base substrate and exposing an N.sup.th conductive post included in the N.sup.th sub package while covering the first to N.sup.th sub packages. The semiconductor package further includes a shielding layer formed on the molding layer and electrically connected to the N.sup.th conductive post.