Embodiments of the present disclosure are directed to die adhesive films for integrated circuit (IC) packaging, as well as methods for forming and removing die adhesive films and package assemblies and systems incorporating such die adhesive films. A die adhesive film may be transparent to a first wavelength of light and photoreactive to a second wavelength of light. In some embodiments, the die adhesive film may be applied to a back or inactive side of a die, and the die surface may be detectable through the die adhesive film. The die adhesive film may be cured and/or marked with laser energy having the second wavelength of light. The die adhesive film may include a thermochromic dye and/or nanoparticles configured to provide laser mark contrast. UV laser energy may be used to remove the die adhesive film in order to expose underlying features such as TSV pads.

A semiconductor device includes a via structure penetrating through a substrate, a portion of the via structure being exposed over a surface of the substrate, a protection layer pattern structure provided on the surface of the substrate and including a first protection layer pattern and a second protection layer pattern, the first protection layer pattern surrounding a lower sidewall of the exposed portion of the via structure and exposing an upper sidewall of the exposed portion of the via structure, the second protection layer pattern exposing a portion of the top surface of the first protection layer pattern adjacent to the sidewall of the via structure, and a pad structure provided on the via structure and the protection layer pattern structure and covering the top surface of the first protection layer pattern exposed by the second protection layer pattern.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed. In yet another aspect, a method and structure for heat-assisted micro-transfer printing is disclosed.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

A semiconductor device includes a via structure penetrating through a substrate, a portion of the via structure being exposed over a surface of the substrate, a protection layer pattern structure provided on the surface of the substrate and including a first protection layer pattern and a second protection layer pattern, the first protection layer pattern surrounding a lower sidewall of the exposed portion of the via structure and exposing an upper sidewall of the exposed portion of the via structure, the second protection layer pattern exposing a portion of the top surface of the first protection layer pattern adjacent to the sidewall of the via structure, and a pad structure provided on the via structure and the protection layer pattern structure and covering the top surface of the first protection layer pattern exposed by the second protection layer pattern.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.