In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.

An electronic component includes a first set comprising an interconnect layer and an electronic circuit having a front face and a back face, which is connected to the interconnect layer by the front face, wherein the first set comprises a metal plate having a front face and a back face joined to the back face of the electronic circuit; a coupling agent between the front face of the metal plate and the back face of the electronic circuit, configured to thermally and electrically connect the metal plate to the electronic circuit; and in that the electronic component comprises: one or more layers made of organic materials stacked around the first set and the metal plate using a printed circuit-type technique and encapsulating the electronic circuit; a thermally conductive metal surface arranged at least partially in contact with the back face of the metal plate.

A semiconductor module including a cooling apparatus and a semiconductor device mounted on the cooling apparatus is provided. The cooling apparatus includes a cooling fin arranged below the semiconductor device, a main-body portion flow channel through which a coolant flows in a predetermined direction to cool the cooling fin, a first coolant flow channel that is connected to one side of the main-body portion flow channel and has a first inclined portion upwardly inclined toward the main-body portion flow channel, and a conveying channel that, when seen from above, lets the coolant into the first coolant flow channel from a direction perpendicular to the predetermined direction or lets the coolant out of the first coolant flow channel in the direction perpendicular to the predetermined direction.

This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.

A power semiconductor module includes a substrate with a structured metallization layer and a number of semiconductor chips. Each chip has a first power electrode bonded to the metallization layer. A leadframe is laser-welded to second power electrodes of the semiconductor chips for electrically interconnecting the semiconductor chips. A control conductor is attached to the leadframe opposite to the semiconductor chips and is electrically isolated from the leadframe. The control conductor is electrically connected to control electrodes of the semiconductor chips in the group.

A semiconductor wafer processing method, having: ablating a back side of a semiconductor wafer with a laser ablation process; and etching the back side of the semiconductor wafer with an etching process; wherein the laser ablation process forms a pattern in the back side of the semiconductor wafer; wherein the etching process preserves the pattern in the back side of the semiconductor wafer.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

A die assembly comprising: a first component layer having conductive through-connections in an insulator, a second component layer comprising a die, and an active device layer (ADL) at an interface between the first component layer and the second component layer. The ADL comprises active elements electrically coupled to the first component layer and the second component layer. The die assembly further comprises a bonding layer electrically coupling the ADL to the second component layer. In some embodiments, the die assembly further comprises another ADL at another interface between the first component layer and a package support opposite to the interface. The first component layer may comprise another die having through-substrate vias (TSVs). The die and the another die may be fabricated using different process nodes.

A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.

A method of manufacturing a packaged semiconductor device is provided. The method includes placing a plurality of semiconductor die on a carrier substrate. The plurality of semiconductor die and an exposed portion of the carrier substrate are encapsulated with an encapsulant. A cooling fixture includes a plurality of nozzles and is placed over the encapsulant. The encapsulant is cooled by way of air exiting the plurality of nozzles. A property of air exiting a first nozzle of the plurality of nozzles is different from that of a second nozzle of the plurality of nozzles.