Provided is a semiconductor package including a first substrate, a first pattern and a second pattern disposed on the first substrate, a semiconductor chip disposed on the first substrate and including a metal layer, a circuit structure disposed on the metal layer of the semiconductor chip, and a plurality of first bumps disposed between the first substrate and the semiconductor chip and electrically connected to the first pattern, wherein the first pattern includes a ground pattern or a power pattern, the first substrate includes a first region overlapping the circuit structure in a vertical direction, the plurality of first bumps are disposed adjacent to the first region on a top surface of the first substrate, and a first bump of the plurality of first bumps has an elongated shape substantially parallel to an adjacent side of the first region.

An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

An embodiment method for forming a semiconductor package includes attaching a first die to a first carrier, depositing a first isolation material around the first die, and after depositing the first isolation material, bonding a second die to the first die. Bonding the second die to the first die includes forming a dielectric-to-dielectric bond. The method further includes removing the first carrier and forming fan-out redistribution layers (RDLs) on an opposing side of the first die as the second die. The fan-out RDLs are electrically connected to the first die and the second die.

Package structures and methods for forming the same are provided. A package structure includes a package component including a first bump. The package structure also includes an intermetallic compound (IMC) on the first bump. The package structure further includes an integrated circuit die including a second bump on the IMC. The integrated circuit die and the package component are bonded together through the first bump and the second bump. The IMC extends from the first bump to the second bump to provide good physical and electrical connections between the first bump and the second bump.

Semiconductor device, multi-die packages, and methods of manufacture thereof are described. In an embodiment, a semiconductor device may include: first conductive pillars and second conductive pillars respectively aligned to a first row of first pins and a second row of second pins of a first die, the first pins and the second pins differing in function; a first insulating layer covering surfaces of the first conductive pillars and the second conductive pillars facing away from the first die; first pads disposed on a surface of the first insulating layer facing away from the first die, the first pads substantially aligned to the first conductive pillars; and first traces coupled to the first pads, the first traces extending over a portion of the first insulating layer covering the second conductive pillars.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

Methods for forming a semiconductor device structure are provided. The method includes bonding a first wafer and a second wafer, and a first transistor is formed in a front-side of the first semiconductor wafer. The method further includes thinning a front-side of the second wafer and forming a second transistor in the front-side of the second wafer.

An embodiment is a method including bonding a first die to a first side of an interposer using first electrical connectors, bonding a second die to first side of the interposer using second electrical connectors, attaching a first dummy die to the first side of the interposer adjacent the second die, encapsulating the first die, the second die, and the first dummy die with an encapsulant, and singulating the interposer and the first dummy die to form a package structure.

A semiconductor device having a semiconductor substrate is provided. The semiconductor substrate includes an integrated circuit, which includes multi-layer structured metallization and inter-metal dielectric. The integrated circuit is below a passivation, which is over a metal structure. The metal structure includes a metal pad and an under bumper metallurgy, which is over and aligned with the metal pad. The metal pad is electrically connected to the integrated circuit, and the under bumper metallurgy is configured to electrically connect to a conductive component of another semiconductor device. The integrated circuit further includes a conductive trace, which is below and aligned with the metal structure. The conductive trace is connected to a power source such that an electromagnetic field is generated at the conductive trace when an electric current from the power source passes through the conductive trace.

In an embodiment, a device includes: a back-side redistribution structure including: a metallization pattern on a first dielectric layer; and a second dielectric layer on the metallization pattern; a through via extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent the through via on the first dielectric layer; a molding compound on the first dielectric layer, the molding compound encapsulating the through via and the integrated circuit die; a conductive connector extending through the second dielectric layer to contact the metallization pattern, the conductive connector being electrically connected to the through via; and an intermetallic compound at the interface of the conductive connector and the metallization pattern, the intermetallic compound extending only partially into the metallization pattern.