A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

The semiconductor die includes a base body, protruding portions and bonding pads. The base body has sidewalls. The protruding portions are laterally protruding from the sidewalls respectively. The bonding pads are disposed on the protruding portions respectively. The wafer dicing method includes following operations. Chips are formed on a semiconductor wafer. Bonding pads are formed at a border line between every two of the adjacent chips. A scribe line is formed and disposed along the bonding pads. A photolithographic pattern is formed on a top layer of the semiconductor wafer to expose the scribe line. The scribe line is etched to a depth in the semiconductor wafer substantially below the top layer to form an etched pattern. A back surface of the semiconductor wafer is thinned until the etched pattern in the semiconductor wafer is exposed.

An optoelectronic component includes at least one inorganic optoelectronically active semiconductor component having an active region that emits or receives light during operation, and a sealing material directly applied by atomic layer deposition, wherein the semiconductor component is applied on a carrier, the carrier includes electrical connection layers, the semiconductor component electrically connects to one of the electrical connection layers via an electrical contact element, and the sealing material completely covers in a hermetically impermeable manner and directly contacts all exposed surfaces including sidewall and bottom surfaces of the semiconductor component and the electrical contact element and all exposed surfaces of the carrier apart from an electrical connection region of the carrier.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed. In yet another aspect, a method and structure for heat-assisted micro-transfer printing is disclosed.

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.

An embodiment is a structure including a first semiconductor device and a second semiconductor device, a first set of conductive connectors mechanically and electrically bonding the first semiconductor device and the second semiconductor device, a first underfill between the first and second semiconductor devices and surrounding the first set of conductive connectors, a first encapsulant on at least sidewalls of the first and second semiconductor devices and the first underfill, and a second set of conductive connectors electrically coupled to the first semiconductor device, the second set of conductive connectors being on an opposite side of the first semiconductor device as the first set of conductive connectors.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.