RF transistor amplifiers an RF transistor amplifier die having a semiconductor layer structure, an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement, and one or more circuit elements on the first and/or second side of the interconnect structure.

A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; and a cover including: a support member that is fixed to an upper surface of the frame and that has an opening inside the frame, and a light transmissive portion that is fixed to the support member and that is disposed so as to close the opening. A first interface, between the light transmissive portion and the support member, is located inward of and lower than a second interface, between the support member and the frame. A portion of the support member that extends at least from an outermost end of the first interface to an innermost end of the second interface has a constant thickness.

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; a cover including: a support member that is fixed on an upper surface of the frame and has an opening inside the frame, and a light transmissive portion disposed so as to close the opening; and a lens body disposed on the support member and above the light transmissive portion. A difference between a thermal expansion coefficient of the light transmissive portion and a thermal expansion coefficient of the lens body is smaller than a difference between a thermal expansion coefficient of the light transmissive portion and a thermal expansion coefficient of the main body.

A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers include outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer.

This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate with the following steps, especially the following sequence: forming a reservoir in a surface layer on the first contact surface, the first surface layer consisting at least largely of a native oxide material, at least partial filling of the reservoir with a first educt or a first group of educts, the first contact surface making contact with the second contact surface for formation of a prebond connection, forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body and positioned inward of the frame; a cover including: a support member that is fixed on an upper surface of the frame and has an opening inside the frame, and a light transmissive portion disposed so as to close the opening; and a lens body disposed on the support member and above the light transmissive portion. A difference between a thermal expansion coefficient of the light transmissive portion and a thermal expansion coefficient of the lens body is smaller than a difference between a thermal expansion coefficient of the light transmissive portion and a thermal expansion coefficient of the main body.

A light emitting device includes: a base including: a main body, and a frame disposed on an upper surface of the main body; one or more laser elements disposed on the upper surface of the main body inward of the frame; a cover comprising: a support member that is fixed on an upper surface of the frame and has an opening inside the frame, and a light transmissive portion disposed so as to close the opening; and a lens body disposed above the light transmissive portion. The support member includes; a first portion fixed on the upper surface of the frame, a second portion on which the lens body is disposed, the second portion being positioned inward of and lower than the first portion, and a third portion on which the light transmissive portion is disposed, the third portion being disposed inward of and lower than the second portion.

A III-N enhancement-mode transistor includes a III-N structure including a conductive channel, source and drain contacts, and a gate electrode between the source and drain contacts. An insulator layer is over the III-N structure, with a recess formed through the insulator layer in a gate region of the transistor, with the gate electrode at least partially in the recess. The transistor further includes a field plate having a portion between the gate electrode and the drain contact, the field plate being electrically connected to the source contact. The gate electrode includes an extending portion that is outside the recess and extends towards the drain contact. The separation between the conductive channel and the extending portion of the gate electrode is greater than the separation between the conductive channel and the portion of the field plate that is between the gate electrode and the drain contact.

A method for applying a bonding layer that is comprised of a basic layer and a protective layer on a substrate with the following method steps: application of an oxidizable basic material as a basic layer on a bonding side of the substrate, at least partial covering of the basic layer with a protective material that is at least partially dissolvable in the basic material as a protective layer. In addition, the invention relates to a corresponding substrate.