A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A semiconductor power module comprises an insulating interposer comprising an insulative layer disposed between a lower metal layer, a first upper metal layer and a second upper metal layer, a semiconductor transistor die disposed on the first upper metal layer, an electrical connector connecting the semiconductor transistor die with the second upper metal layer, a housing enclosing the insulating interposer and the semiconductor transistor die, a first potting material covering at least selective portions of the semiconductor transistor die and the electrical connector; and a second potting material applied onto the first potting material, wherein the first and second potting materials are different from each other.

A semiconductor device includes first semiconductor chips that each include a first control electrode and a first output electrode, second semiconductor chips each include a second control electrode and a second output electrode, first and second input circuit patterns on which the first and second input electrodes are disposed, respectively, first and second control circuit patterns electrically connected to the first and second control electrodes, respectively, first and second resistive elements, and a first inter-board wiring member. The first control electrodes and first resistive element are electrically connected via the first control circuit pattern, the second control electrodes and second resistive element are electrically connected via the second control circuit pattern, and at least one of the first output electrodes and at least one of the second output electrodes are electrically connected to each other via the first inter-board wiring member.

A method is disclosed for producing a power semiconductor module that includes a substrate, at least one semiconductor body, a connecting element and a contact element. The method includes: arranging the substrate in a housing having walls; at least partly filling a capacity formed by the walls of the housing and the substrate with an encapsulation material; hardening the encapsulation material to form a hard encapsulation; and closing the housing, wherein the contact element extends from the connecting element through an interior of the housing and through an opening in a cover of the housing to an outside of the housing in a direction perpendicular to a first surface of a first metallization layer of the substrate.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

A semiconductor assembly includes a semiconductor switching device, a conductive load base structure, and a current sense unit. The semiconductor switching device includes a drain structure and one or more array units, wherein each array unit includes a load pad and a plurality of transistor cells electrically connected in parallel between the load pad of the array unit and the drain structure. The current sense unit is electrically connected between a first one of the load pads and the load base structure.

Provided is a semiconductor device including: a transistor portion provided in a semiconductor substrate; and a diode portion provided in the semiconductor substrate, in which an area ratio of the transistor portion to the diode portion on a front surface of the semiconductor substrate is larger than 3.1 and smaller than 4.7. Provided is a semiconductor module including: a semiconductor device including a transistor portion and a diode portion provided in a semiconductor substrate; an external connection terminal electrically connected to the semiconductor device; and a coupling portion for electrically connecting the semiconductor device and the external connection terminal. The coupling portion may be in plane contact with a front surface electrode of the semiconductor device at a predetermined junction surface. An area ratio of the transistor portion to the diode portion may be larger than 2.8 and smaller than 4.7.

A module arrangement for power semiconductor devices, includes two or more heat spreading layers with a first surface and a second surface being arranged opposite to the first surface. At least two or more power semiconductor devices are arranged on the first surface of the heat spreading layer and electrically connected thereto. An electrical isolation stack comprising an electrically insulating layer and electrically conductive layers is arranged in contact with the second surface of each heat spreading layer. The at least two or more power semiconductor devices, the heat spreading layers and a substantial part of each of the electrical isolation stacks are sealed from their surrounding environment by a molded enclosure. Accordingly, similar or better thermal characteristic of the module can be achieved instead of utilizing high cost electrically insulating layers, and double side cooling configurations can be easily implemented, without the use of a thick baseplate.