A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. A plurality of cooling structures are welded to the metallized second side of the substrate. Each of the cooling structures includes a plurality of distinct weld beads disposed in a stacked arrangement extending away from the substrate. The substrate can be electrically conductive or insulating. Corresponding methods of manufacturing such semiconductor modules and substrates with such welded cooling structures are also provided.

A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. A plurality of cooling structures are welded to the metallized second side of the substrate. Each of the cooling structures includes a plurality of distinct weld beads disposed in a stacked arrangement extending away from the substrate. The substrate can be electrically conductive or insulating. Corresponding methods of manufacturing such semiconductor modules and substrates with such welded cooling structures are also provided.

A metal-oxide-semiconductor field-effect transistor (MOSFET) power device includes an active region formed on a bulk semiconductor substrate, the active region having a first conductivity type formed on at least a portion of the bulk semiconductor substrate. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

A metal-oxide-semiconductor field-effect transistor (MOSFET) power device includes an active region formed on a bulk semiconductor substrate, the active region having a first conductivity type formed on at least a portion of the bulk semiconductor substrate. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well.

A 3D integrated circuit device, including: a first transistor; a second transistor; and a third transistor, where the third transistor is overlaying the second transistor and the third transistor is controlled by a third control line, where the second transistor is overlaying the first transistor and the second transistor is controlled by a second control line, where the first transistor is part of a control circuit controlling the second control line and the third control line, and where the second transistor and the third transistor are self-aligned.

A 3D integrated circuit device, including: a first transistor; a second transistor; and a third transistor, where the third transistor is overlaying the second transistor and the third transistor is controlled by a third control line, where the second transistor is overlaying the first transistor and the second transistor is controlled by a second control line, where the first transistor is part of a control circuit controlling the second control line and the third control line, and where the second transistor and the third transistor are self-aligned.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

An electronic component which comprises an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating at least part of at least one of the carrier and the electronic chip, and a functional structure covering a surface portion of the encapsulant, wherein at least part of the covered surface portion of the encapsulant is spatially selectively roughened.

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.