A semiconductor device has a semiconductor package including a substrate with a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A metal mask having a fiducial marker is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The metal mask is removed after forming the shielding layer.

A microelectronic assembly includes a plurality of stacked microelectronic packages, each comprising a dielectric element having a major surface, an interconnect region adjacent an interconnect edge surface which extends away from the major surface, and plurality of package contacts at the interconnect region. A microelectronic element has a front surface with chip contacts thereon coupled to the package contacts, the front surface overlying and parallel to the major surface. The microelectronic packages are stacked with planes defined by the dielectric elements substantially parallel to one another, and the package contacts electrically coupled with panel contacts at a mounting surface of a circuit panel via an electrically conductive material, the planes defined by the dielectric elements being oriented at a substantial angle to the mounting surface.

A semiconductor integrated circuit chip, in which multi-core processors are integrated, is usually mounted over an organic wiring board by FC bonding to form a BGA package by being integrated with the substrate. In such a structure, power consumption is increased, and hence the power supplied only from a peripheral portion of the chip is insufficient, so that a power supply pad is also provided in the chip central portion. However, because of an increase in the wiring associated with the integration of a plurality of CPU cores, etc., there occurs a portion between the peripheral portion and the central portion of the chip, where a power supply pad cannot be arranged. According to the outline of the present application, in a semiconductor integrated circuit device such as a BGA, etc., in which a semiconductor chip is mounted over an interposer, such as a multilayer organic wiring board, in a face-up manner, a first group of metal through electrodes, which are provided in the semiconductor chip to supply a power supply potential to a core circuit, etc., and a first metal land over the interposer are interconnected by a first conductive adhesive member film.

A microelectronic assembly can be made by joining first and second subassemblies by electrically conductive masses to connect electrically conductive elements on support elements of each subassembly. A patterned layer of photo-imageable material may overlie a surface of one of the support elements and have openings with cross-sectional dimensions which are constant or monotonically increasing with height from the surface of that support element, where the masses extend through the openings and have dimensions defined thereby. An encapsulation can be formed by flowing an encapsulant into a space between the joined first and second subassemblies.

A semiconductor device has a semiconductor package including a substrate with a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A metal mask having a fiducial marker is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The metal mask is removed after forming the shielding layer.

An integrated circuit (IC) package that is to be incorporated into a computing device may include a metallization structure with circuits and/or other elements such as capacitors or inductors thereon. Pads for input/output (I/O) (or other) purposes may also be present at different locations on the metallization structure. Exemplary aspects of the present disclosure allow mold material to be placed over the circuits and/or other elements in readily-customizable configurations so as to allow placement of the I/O pads in any desired location on the metallization structure. Specifically, before the mold material is applied to the metallization structure, a mask material such as tape may be applied to portions of the metallization structure that contain I/O pads or otherwise have reasons to not have mold material thereon. The mold material is applied, and the mask material is removed, taking unwanted mold material with the mask material.

A chip on film package including a flexible film, a first patterned circuit layer, one or more first chips, a second patterned circuit layer, and one or more second chips. The flexible film includes a first surface and a second surface opposite to the first surface. The first patterned circuit layer is disposed on the first surface. The one or more first chips are mounted on the first surface and electrically connected to the first patterned circuit layer. The second patterned circuit layer is disposed on the second surface. The one or more second chips are mounted on the second surface and electrically connected to the second patterned circuit layer.

Wireless modules having a semiconductor package attached to an antenna package is disclosed. The semiconductor package may house one or more electronic components as a single die package and/or a system in a package (SiP) implementation. The antenna package may be communicatively coupled to the semiconductor package using by one or more coupling pads. The antenna package may further have one or more radiating elements for transmitting and or receiving wireless signals. The antenna package and the semiconductor package may have dissimilar number of interconnect layers and/or dissimilar materials of construct.

An integrated circuit (IC) package that is to be incorporated into a computing device may include a metallization structure with circuits and/or other elements such as capacitors or inductors thereon. Pads for input/output (I/O) (or other) purposes may also be present at different locations on the metallization structure. Exemplary aspects of the present disclosure allow mold material to be placed over the circuits and/or other elements in readily-customizable configurations so as to allow placement of the I/O pads in any desired location on the metallization structure. Specifically, before the mold material is applied to the metallization structure, a mask material such as tape may be applied to portions of the metallization structure that contain I/O pads or otherwise have reasons to not have mold material thereon. The mold material is applied, and the mask material is removed, taking unwanted mold material with the mask material.

An electronic power conversion component includes an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die-attach pad. A GaN-based semiconductor die is secured to the die attach pad and includes a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal and the drain is electrically coupled to the drain terminal. A plurality of wirebonds electrically couple the source to the source terminal and the drain to the drain terminal. An encapsulant is formed over the GaN-based semiconductor die, the plurality of wirebonds and at least a top surface of the package base.