A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

An embodiment related to a stacked package is disclosed. The stacked package includes a conductive gang with gang legs electrically coupling a second component stacked over a first die to a package substrate. The first die is mounted over a die attach region of the package substrate and electrically coupled to the package substrate.

A method of forming a chip package is provided. The method includes providing a malleable carrier with a layer of an electrically conductive material formed thereon, and positive fitting the malleable carrier to a chip to at least partially enclose the chip with the malleable carrier. The layer at least partially physically contacts the chip, such that the layer electrically contacts a chip contact of the chip. The layer forms a redistribution layer.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

A semiconductor packaging structure for packaging a semiconductor chip is disclosed, the semiconductor chip comprises at least two electrodes, each of the at least two electrodes comprises at least one electrode opening, and the packaging structure comprises: a packaging chassis, provided with at least two pin electrodes respectively corresponding to the at least two electrodes; and at least two extended electrodes, each of the at least two extended electrodes being electrically connected to one of the at least two pin electrodes, and comprising at least one conductive pillar for inserting into the at least one electrode opening formed on one of the at least two electrodes.

A base plate (1) made of a metal has a through-hole (2). An insulating substrate (3) is provided on the base plate (1). A semiconductor chip (4) is provided on the insulating substrate (3). A case (8) has a screw-hole (9) communicating with the through-hole (2), covers the insulating substrate (3) and the semiconductor chip (4), and is disposed on the base plate (1). A screw (11) made of a metal is inserted into the through-hole (2) and the screw-hole (9) to fix the case (8) to the base plate (1). A flexible material (12) having flexibility is filled in a cavity between a bottom surface of the screw-hole (9) in the case (8) and a distal end of the screw (11).

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip bond was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

A method of making a semiconductor including soldering a conductor to an aluminum metallization is disclosed. In one example, the method includes substituting an aluminum oxide layer on the aluminum metallization by a substitute metal oxide layer or a substitute metal alloy oxide layer. Then, substitute metal oxides in the substitute metal oxide layer or the substitute metal alloy oxide layer are at least partly reduced. The conductor is soldered to the aluminum metallization using a solder material.