A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 m. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Provided is a thermal bonding sheet capable of preventing bonding irregularity by uniform thickness, and imparting the bonding reliability at high temperatures, and a thermal bonding sheet with dicing tape having the thermal bonding sheet. A thermal bonding sheet includes a precursor layer that is to become a sintered layer by heating, and the precursor layer has an average thickness of 5 m to 200 m, and a maximum thickness and a minimum thickness falling within a range of 20% of the average thickness. A thermal bonding sheet includes a precursor layer that is to become a sintered layer by heating, and the precursor layer has an average thickness of 5 m to 200 m, and a surface roughness Sa measured in a field of view of 200 m200 m by a confocal microscope of 2 m or less.

Provided is a thermal bonding sheet capable of preventing bonding irregularity by uniform thickness, and imparting the bonding reliability at high temperatures, and a thermal bonding sheet with dicing tape having the thermal bonding sheet. A thermal bonding sheet includes a precursor layer that is to become a sintered layer by heating, and the precursor layer has an average thickness of 5 m to 200 m, and a maximum thickness and a minimum thickness falling within a range of 20% of the average thickness. A thermal bonding sheet includes a precursor layer that is to become a sintered layer by heating, and the precursor layer has an average thickness of 5 m to 200 m, and a surface roughness Sa measured in a field of view of 200 m200 m by a confocal microscope of 2 m or less.

An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

An electronic component, a semiconductor package, and an electronic device including the electronic component and/or the semiconductor package are provided. The electronic component includes an electronic element; an encapsulation member that encapsulates the electronic element and has a first surface and a second surface substantially parallel to each other; and a lead electrically connected to the electronic element and extending outward from the encapsulation member. The lead is disposed entirely in a region between a plane of the first surface of the encapsulation member and a plane of the second surface of the encapsulation member.

Disclosed is a semiconductor device that includes a semiconductor chip; bonding pads provided to the semiconductor chip; a plurality of lead terminals arranged around the semiconductor chip; a plurality of bonding wires that electrically connect the semiconductor chip with the plurality of lead terminals; and a resin encapsulant which encapsulates the semiconductor chip and the bonding wires, the semiconductor device further having an insulating material interposed at the interface between the bonding wires and the resin encapsulant, and the insulating material containing a nanometer-sized insulating particle and amorphous silica.

An electronic component mounting board includes an inorganic substrate, a wiring board, and a bond. The inorganic substrate includes an electronic component mounting portion in a central area of an upper surface of the inorganic substrate in which an electronic component is mountable. The wiring board is a frame surrounding the electronic component mounting portion on the upper surface of the inorganic substrate. The bond is located between the inorganic substrate and the wiring board. The inorganic substrate includes a downward bend outward from a bond area including the bond.

An electronic component mounting board includes an inorganic substrate, a wiring board, and a bond. The inorganic substrate includes an electronic component mounting portion in a central area of an upper surface of the inorganic substrate in which an electronic component is mountable. The wiring board is a frame surrounding the electronic component mounting portion on the upper surface of the inorganic substrate. The bond is located between the inorganic substrate and the wiring board. The inorganic substrate includes a downward bend outward from a bond area including the bond.

A semiconductor component support is provided which includes a component support portion for a semiconductor component to be mounted on the semiconductor component support portion. The component support portion includes a metal part that includes an opening in plan view. The opening of the metal part includes first and second sections. The second section communicates with the first section, and is arranged outside the first section. The second section is wider than the first section. The first section can be at least partially positioned directly under a mount-side main surface of the semiconductor component.

There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices. The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 m. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175 C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.