A semiconductor device including a die pad having a front surface made of Cu; a semiconductor chip disposed so as to be opposed to the front surface of the die pad; a bonding layer provided between the die pad and the semiconductor chip; and a plurality of leads disposed around the die pad, wherein the die pad and the plurality of leads make up a lead frame in cooperation with each other, a cavity is fabricated on the surface of the plurality of leads, and a projecting portion is fabricated next to the cavity.

A semiconductor device including a die pad having a front surface made of Cu; a semiconductor chip disposed so as to be opposed to the front surface of the die pad; a bonding layer provided between the die pad and the semiconductor chip; and a plurality of leads disposed around the die pad, wherein the die pad and the plurality of leads make up a lead frame in cooperation with each other, a cavity is fabricated on the surface of the plurality of leads, and a projecting portion is fabricated next to the cavity.

A electronic multi-output device having a substrate including a pad and pins. A composite first chip has a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface. Patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. The second terminals are connected by discrete first and second metal clips to respective substrate pins. A composite second chip has a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to be vertically attached with its first terminals to the first and second clips, respectively. The third terminals are connected by discrete clips to respective substrate pins. The common second terminal is connected by a common clip to a substrate pin.

A electronic multi-output device having a substrate including a pad and pins. A composite first chip has a first and a second transistor integrated so that the first terminals of the transistors are merged into a common terminal on one chip surface. Patterned second and third terminals are on the opposite chip surface. The common first terminal is attached to the substrate pad. The second terminals are connected by discrete first and second metal clips to respective substrate pins. A composite second chip has a third and a fourth transistor integrated so that the second terminals of the transistors are merged into a common terminal on one chip surface. Patterned first and third terminals are on the opposite chip surface. The second chip is flipped to be vertically attached with its first terminals to the first and second clips, respectively. The third terminals are connected by discrete clips to respective substrate pins. The common second terminal is connected by a common clip to a substrate pin.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170 C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

Disclosed embodiments relate to a semiconductor device. A semiconductor device is fabricated by attachment of a first chip to a first surface of a pad of a leadframe. Each of one or more terminals of the first chip is connected to a respective lead of the leadframe. The first chip and the first surface of the pad are then encapsulated in a packaging material, while leaving an opposite second surface of the pad exposed. A second chip is attached to a recessed portion of the second surface of the pad so that at least one terminal of the second chip is substantially coplanar with an un-recessed portion of the second surface. In one embodiment, a third chip is also attached to the recessed portion of the second surface so that at least one terminal of the third chip is substantially coplanar with the un-recessed portion of the second surface.

Disclosed embodiments relate to a semiconductor device. A semiconductor device is fabricated by attachment of a first chip to a first surface of a pad of a leadframe. Each of one or more terminals of the first chip is connected to a respective lead of the leadframe. The first chip and the first surface of the pad are then encapsulated in a packaging material, while leaving an opposite second surface of the pad exposed. A second chip is attached to a recessed portion of the second surface of the pad so that at least one terminal of the second chip is substantially coplanar with an un-recessed portion of the second surface. In one embodiment, a third chip is also attached to the recessed portion of the second surface so that at least one terminal of the third chip is substantially coplanar with the un-recessed portion of the second surface.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a thermally conductive flow layer underlying the sintered metallic layer, and a thermally conductive substrate underlying the thermally conductive flow layer.

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a thermally conductive flow layer underlying the sintered metallic layer, and a thermally conductive substrate underlying the thermally conductive flow layer.