A method for producing an electric device with a multi-layer contact is disclosed. In an embodiment, a method includes providing a carrier, the carrier having a metallic layer disposed on its surface, providing a semiconductor substrate, forming a layer stack on the semiconductor substrate and attaching the layer stack of the semiconductor substrate to the metallic layer of the carrier so that an intermetallic phase is formed between the metallic layer and the solder layer.

The present disclosure relates to a hermetic package capable of handling a high coefficient of thermal expansion (CTE) mismatch configuration. The disclosed hermetic package includes a metal base and multiple segments that are discrete from each other. Herein, a gap exists between every two adjacent ceramic wall segments and is sealed with a connecting material. The ceramic wall segments with the connecting material form a ring wall, where the gap between every two adjacent ceramic wall segments is located at a corner of the ring wall. The metal base is either surrounded by the ring wall or underneath the ring wall.

A stacked-chip assembly including a plurality of IC chips or die that are stacked, and a plurality of stacked leads. Leads from separate leadframes may be bonded together so as to tie corresponding metal features of the various chips to a same ground, signal, or power rail. Each leadframe may include a center paddle, which is disposed between two chips in the stack. The center paddle may function as one or more of a thermal conduit and common electrical rail (e.g., ground). The leadframes may be employed without the use of any bond wires with leads bonded directly to bond pads of the chips. A first IC chip may be mounted to a base leadframe and subsequent die-attach leadframes and IC chips are stacked upon the first IC chip and base leadframe. The die-attach leadframes may be iteratively bonded to an underlying leadframe and the bonded stacked leads stamped out of their respective leadframe sheets.

Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.

A strip-shaped substrate made from a film includes a plurality of units for producing chip carriers. Each unit has a chip island for fixing a semiconductor chip, electrodes for electrical connection of the semiconductor chip, and through-openings for structuring the unit. At least one through-opening forms an anchoring edge for a casting compound for encapsulating the semiconductor chip. A surface section of the film abutting the through-opening is chamfered to form the anchoring edge. The anchoring edge protrudes past the side of the film on which the chip island is arranged.

Various embodiments provide for a chip package consisting of a layer over a carrier, further carrier material over the layer, wherein one or more portions of the further carrier material is removed, and a chip with one or more contact pads, where the chip is adhered to the carrier via the layer. A wafer level package consisting of a plurality of chips adhered to the carrier via a plurality of portions of the layer released from the further carrier material is also provided for.

A stacked-chip assembly including a plurality of IC chips or die that are stacked, and a plurality of stacked leads. Leads from separate leadframes may be bonded together so as to tie corresponding metal features of the various chips to a same ground, signal, or power rail. Each leadframe may include a center paddle, which is disposed between two chips in the stack. The center paddle may function as one or more of a thermal conduit and common electrical rail (e.g., ground). The leadframes may be employed without the use of any bond wires with leads bonded directly to bond pads of the chips. A first IC chip may be mounted to a base leadframe and subsequent die-attach leadframes and IC chips are stacked upon the first IC chip and base leadframe. The die-attach leadframes may be iteratively bonded to an underlying leadframe and the bonded stacked leads stamped out of their respective leadframe sheets.

A semiconductor device having a leadframe including a pad (101) surrounded by elongated leads (110) spaced from the pad by a gap (113) and extending to a frame, the pad and the leads having a first thickness (115) and a first and an opposite and parallel second surface; the leads having a first portion (112) of first thickness near the gap and a second portion (111) of first thickness near the frame, and a zone (114) of reduced second thickness (116) between the first and second portions; the second surface (112a) of the first lead portions is coplanar with the second surface (111a) of the second portions. A semiconductor chip (220) with a terminal is attached the pad. A metallic wire connection (230) from the terminal to an adjacent lead includes a stitch bond (232) attached to the first surface of the lead.

A strip-shaped substrate made from a film includes a plurality of units for producing chip carriers. Each unit has a chip island for fixing a semiconductor chip, electrodes for electrical connection of the semiconductor chip, and through-openings for structuring the unit. At least one through-opening forms an anchoring edge for a casting compound for encapsulating the semiconductor chip. A surface section of the film abutting the through-opening is chamfered to form the anchoring edge. The anchoring edge protrudes past the side of the film on which the chip island is arranged.

The present disclosure relates to a hermetic package capable of handling a high coefficient of thermal expansion (CTE) mismatch configuration. The disclosed hermetic package includes a metal base and multiple segments that are discrete from each other. Herein, a gap exists between every two adjacent ceramic wall segments and is sealed with a connecting material. The ceramic wall segments with the connecting material form a ring wall, where the gap between every two adjacent ceramic wall segments is located at a corner of the ring wall. The metal base is either surrounded by the ring wall or underneath the ring wall.