Disclosed is an electrically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses an interband cascade gain region, two distributed mirrors, and a low-loss refractive index waveguide. A preferred embodiment includes at least one wafer bonded GaAs-based mirror.

An array of surface-emitting lasers is provided. The array outputs high brightness in a unipolar way. The array comprises a stress-adjustment unit and a plurality of epitaxial device units. The stress-adjustment unit is used to adjust stress. The stress from a substrate is used to select a laser mode for an aperture unit. The selection of the laser mode is enhanced for the aperture unit without sacrificing driving current. Low current operation is achieved in a single mode for effectively reducing volume and further minimizing the size of the whole array to achieve high-quality laser output. An object can be scanned by the outputted laser to obtain a clear image with a high resolution. Hence, the present invention is applicable for face recognition with high recognition and high security.

A tunable vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a VCSEL emission structure, piezoelectric material, and a piezoelectric electrode. The VCSEL emission structure includes a first reflector; a second reflector; and an active cavity material structure disposed between the first and second reflectors. The active cavity material structure includes an active region. The piezoelectric material is mechanically coupled to the VCSEL emission structure such that when the piezoelectric material experiences a mechanical stress, the mechanical stress is transferred to the active cavity material structure of the VCSEL emission structure. The piezoelectric electrode is designed to cause an electric field within the piezoelectric material. The electric field causes the piezoelectric material to experience the mechanical stress, which causes the active cavity material structure to experience the mechanical stress, which causes the emission wavelength of the VCSEL to be modified from a nominal wavelength of the VCSEL.

There is provided a semiconductor laser including: a first mirror layer; a second mirror layer; an active layer; a current confinement layer; a first region including a plurality of first oxidized layers; and a second region including a plurality of second oxidized layers, in which, in a plan view, the laminated body includes a first part including the first region and the second region, a second part including the first region and the second region, and a third part disposed between the first part and the second part and resonating light generated in the active layer, the third part includes a fourth part including the first region and the second region and having a first groove, a fifth part including the first region and the second region and having a second groove, and a sixth part disposed between the fourth part and the fifth part and sandwiched between the first part and the second part, in a plan view.

A vertical cavity surface emitting laser (VCSEL) may include an epitaxial structure that includes a first active layer, a second active layer, and a tunnel junction therebetween. The VCSEL may include a set of contacts that are electrically connected to the epitaxial structure. The set of contacts may include three or more contacts, and the set of contacts may be electrically separated from each other on the VCSEL. At least one contact, of the set of contacts, may be electrically connected to the epitaxial structure at a depth between the first active layer and the second active layer.

A light-emitting device includes: a first light-emitting element array that includes plural first light-emitting elements arranged at a first interval; a second light-emitting element array that includes plural second light-emitting elements arranged at a second interval wider than the first interval, second light-emitting element array being configured to output a light output larger than a light output of the first light-emitting element array, and being configured to be driven independently from the first light-emitting element array; and a light diffusion member provided on an emission path of the second light-emitting element array.

Disclosed herein are various embodiments for high performance wireless data transfers. In an example embodiment, laser chips are used to support the data transfers using laser signals that encode the data to be transferred. The laser chip can be configured to (1) receive a digital signal and (2) responsive to the received digital signal, generate and emit a variable laser signal, wherein the laser chip comprises a laser-emitting epitaxial structure, wherein the laser-emitting epitaxial structure comprises a plurality of laser-emitting regions within a single mesa structure that generate the variable laser signal. Also disclosed are a number of embodiments for a photonics receiver that can receive and digitize the laser signals produced by the laser chips. Such technology can be used to wireless transfer large data sets such as lidar point clouds at high data rates.

A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

Provided is a surface emitting laser apparatus capable of improving the yield.

The present technology includes: a stacked structure having at least one light emission unit including a first oxidized constriction layer and an electrode unit including a second oxidized constriction layer at different positions in an in-plane direction; and a conductive layer that makes the light emission unit and the electrode unit conductive with each other, in which the conductive layer includes a first portion covering a region between the light emission unit and the electrode unit, a second portion covering a near half part of the electrode unit, the near half part being relatively close to the light emission unit, and a third portion covering a far half part of the electrode unit, the far half part being relatively far from the light emission unit, in the stacked structure, and a degassing unit is provided in the first portion and/or the second portion and the third portion.

A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.