The present technology provides a surface emitting laser that can be manufactured with an excellent yield and has a configuration of confining a current and light. The present technology provides a surface emitting laser including a first structure including a first multilayer film reflector, a second structure including a second multilayer film reflector, and a resonator disposed between the first and second structures and including an active layer, in which a joint portion exists in at least one of inside the first structure, inside the second structure, inside the resonator, between the resonator and the first structure, or between the resonator and the second structure, and a first confinement portion that confines a current is provided in at least one of first or second constituent portion joined at the joint portion, and a second confinement portion that confines at least light of a current or light is provided in at least one of the first or second constituent portion.

An apparatus comprises an array of vertical-cavity surface-emitting lasers (VCSELs) on a first substrate and an array of detectors on a second substrate, the detectors being configured to detect laser beams emitted by the VCSELs and backscattered by an object, wherein the first substrate is mounted to the second substrate and is configured to allow the laser beams emitted by the VCSELs and backscattered by the object to transmit through the first substrate and reach the detectors.

A VCSEL can include: an elliptical oxide aperture in an oxidized region that is located between an active region and an emission surface, the elliptical aperture having a short radius and a long radius with a radius ratio (short radius)/(long radius) being between 0.6 and 0.8, the VCSEL having a relative intensity noise (RIN) of less than ?140 dB/Hz. The VCSEL can include an elliptical emission aperture having the same dimensions of the elliptical oxide aperture. The VCSEL can include an elliptical contact having an elliptical contact aperture therein, the elliptical contact being around the elliptical emission aperture. The elliptical contact can be C-shaped. The VCSEL can include one or more trenches lateral of the oxidized region, the one or more trenches forming an elliptical shape, wherein the oxidized region has an elliptical shape. The one or more trenches can be trapezoidal shaped trenches.

A surface emitting laser apparatus and a method for manufacturing the same are provided. The surface emitting laser apparatus includes a first reflector layer, an active light-emitting layer, a second reflector layer, and a current confinement layer. The active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam. The current confinement layer is disposed above or below the active light-emitting layer. The current confinement layer is a semiconductor layer, and an energy gap width of the current confinement layer is greater than an energy gap width of the active light-emitting layer.

A vertical cavity surface emitting laser includes a base and a layered element provided on the base. The layered element includes a first mirror layer, a second mirror layer, and an active layer provided between the first mirror layer and the second mirror layer. The layered element further includes a light exiting section via which light produced in the active layer exits. The light exiting section is an outermost surface of an AlGaInP layer or an AlGaAsP layer.

Provided is a surface emitting laser that is to be excited by an external light source and in which a light-emitting position is defined. A surface emitting laser includes a pair of reflecting mirrors (11, 15) and an active layer (13) that is arranged between the pair of reflecting mirrors (11, 15) and that is to be excited by light that is radiated from an external light source. A gap is formed between the active layer and one of the pair of reflecting mirrors (15), the oscillation wavelength of the surface emitting laser is changed, and a defining structure (20) that defines a light-emitting region of the active layer (13) is arranged in at least one of a region between the pair of reflecting mirrors (11, 15) and a region in at least one of the pair of reflecting mirrors (11, 15).

Within examples, a laser includes a first electrode and a second electrode; a first transport layer and a second transport layer that are between the first electrode and the second electrode; a gain layer positioned between the first transport layer and the second transport layer, where the gain layer comprises a material having a Perovskite crystal structure; and a substrate on which the first electrode, the second electrode, the first transport layer, the second transport layer, and the gain layer are formed, where a distributed feedback (DFB) waveguide is formed within the first transport layer, and where the laser is configured such that a current flowing through the gain layer between the first electrode and the second electrode causes the gain layer to emit coherent light. Examples also include methods for fabricating the laser, as well as additional lasers and methods for forming those lasers.

Provided is a surface emitting laser that is to be excited by an external light source and in which a light-emitting position is defined.

A surface emitting laser includes a pair of reflecting mirrors (11, 15) and an active layer (13) that is arranged between the pair of reflecting mirrors (11, 15) and that is to be excited by light that is radiated from an external light source. A gap is formed between the active layer and one of the pair of reflecting mirrors (15), the oscillation wavelength of the surface emitting laser is changed, and a defining structure (20) that defines a light-emitting region of the active layer (13) is arranged in at least one of a region between the pair of reflecting mirrors (11, 15) and a region in at least one of the pair of reflecting mirrors (11, 15).

A VCSEL epitaxial structure includes an etched post between an active region and a sacrificial layer. Aa regrowth of sacrificial layer and HCG layer are around the etched post. providing a fully epitaxial grown tunable VCSEL with a small cavity volume, lateral electrical current and optical confinement. The etched post and regrowth provide lateral current and optical confinement, small volume and increased efficiency for more demanding applications, such as very high-speed modulation and coherent communication.

A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.