A VCSEL may include a bottom DBR mirror and a top DBR mirror above the bottom DBR mirror. The VCSEL may include a vertical optical cavity located within a portion of the bottom and top DBR mirrors. The vertical optical cavity may be configured to emit an optical signal. The VCSEL may include a lateral feedback optical cavity located within a different portion of the bottom and the top DBR mirrors configured to receive a feedback bias signal configured to bias the lateral feedback optical cavity to adjust the optical signal. The VCSEL may include an active region formed between the bottom and the top DBR mirrors that may include an oxide layer defining an oxide aperture. The VCSEL may include an isolation implant configured to electrically isolate the vertical optical cavity from the feedback optical cavity and to create a first and a second aperture within the oxide aperture.

A laser arrangement has an array of Vertical Cavity Surface Emitting Lasers (VCSELs) and an optical structure. The VCSELs are on a semiconductor substrate and have: first and second electrodes, first and second Bragg reflectors, and an active layer between the Bragg reflectors. The electrodes provide an electrical current across the active layer. The VCSELs are bottom emitters and emit laser light through the semiconductor substrate. The optical structure increases a laser emission angle of the laser light for eye safety. The optical structure includes a surface structure of the semiconductor substrate. A thickness of the semiconductor substrate is arranged such that laser light emitted by neighboring VCSELs intersect with each other in a plane of the surface structure. The surface structure is arranged such that a homogeneous emission of an emission surface of the semiconductor substrate is enabled.

A semiconductor vertical light source includes upper and lower mirrors with an active region in between, an inner mode confinement region, and an outer current blocking region that includes a common epitaxial layer including an epitaxially regrown interface between the active region and upper mirror. A conducting channel including acceptors is in the inner mode confinement region. The current blocking region includes a first impurity doped region with donors between the epitaxially regrown interface and active region, and a second impurity doped region with acceptors between the first doped region and lower mirror. The outer current blocking region provides a PNPN current blocking region that includes the upper mirror or a p-type layer, first doped region, second doped region, and lower mirror or an n-type layer. The first and second impurity doped region force current flow into the conducting channel during normal operation of the light source.

A vertical cavity surface emitting laser (VCSEL) is formed on a substrate. The VCSEL includes a layer structure and one or more distributed Bragg reflector (DBR) mirrors formed on at least one of the layer structure or the substrate. The layer structure generates an optical signal at a first wavelength based on a control current received from a transistor that is formed on the substrate. Rare earth ions (REIs) are deposited in the one or more DBR mirrors such that the one or more DBR mirrors receive the optical signal at the first wavelength and generate the optical signal at a second wavelength.

A surface emitting laser includes a semiconductor substrate, a resonance portion that is disposed over the semiconductor substrate and that emits light, an insulating layer disposed in a side face of the resonance portion, and a coating film covering the resonance portion and the insulating layer, wherein a portion disposed in a side face of the insulating layer of the coating film is constituted by an atomic layer deposition film.

A light emitting device has a first mirror; and one or more active regions with a first active region adjacent to the first mirror. Each of active region includes quantum wells and barriers, and is surrounded by one or more p-n junctions. The active regions have a selected shape structure each with a tunnel junction (TJ). One or more apertures are provided with the selected shape structure; one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's, created during a regrowth process that is independent of a first growth process of the first mirror as well as the active region and the one or more TJs. One or more electrical confinement apertures are defined by the one or more BTJ's, additional TJ's, planar structures and/or additional BTJ's. A vertical resonator cavity is disposed over the electrical confinement aperture. A high contrast grating (HCG) operates as a second mirror positioned over the vertical resonator cavity. The HCG is configured to reflect a first portion of light back into the vertical resonator cavity, and a second portion of the light as an output beam from the VCSEL. The HCG structure is layered on the selected shape structure. A shape of the output beam of the light emitting device is determined by a geometric shape of the one or more BTJ apertures, apertures for additional TJ's, planar structures and/or additional BTJ's, with a transmission function of the HCG. The shape is designed according to the desired optical transmission function of the application.

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Provided is an external cavity laser (ECL) including a vertical cavity surface emitting laser (VCSEL)-Distributed Bragg Reflector (DBR) type light emitting unit configured to receive a current and emit light, and including a DBR function layer and an active layer for a quantum well formed on one side of this DBR function layer, and an optical circuit unit including a light guide in which one end surface is installed to face an active layer at one side of the active layer, light generated from the active layer is received and guided, and an optical axis is formed vertically to an active layer plane, a reflection pattern that is formed at one side of the light guide so as to receive light output from the other end of the light guide to reflect the light again to the light guide, and an external layer for surrounding the light guide and the reflection pattern, wherein the VCSEL-DBR type light emitting unit and the optical circuit unit are mutually coupled to each other.

According to the present invention, an optical coupling efficiency in the ECL may be raised by improving an inefficient optical coupling issue including alignment, reflection, and the like in a coupling part of a gain element and a silicon waveguide.

A surface emitting laser apparatus and a method for manufacturing the same are provided. The surface emitting laser apparatus includes a first reflector layer, an active light-emitting layer, a second reflector layer, and a current confinement layer. The active light-emitting layer is disposed between the first reflector layer and the second reflector layer, so as to produce a laser beam. The current confinement layer is disposed above or below the active light-emitting layer. The current confinement layer is a semiconductor layer, and an energy gap width of the current confinement layer is greater than an energy gap width of the active light-emitting layer.

In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate having a first side and a second side, a first mirror disposed to the first side of the substrate, a second mirror disposed to the first side of the substrate and defining a first optical cavity between the first mirror and the second mirror, an active region between the first mirror and the second mirror, and a third mirror defining a second optical cavity. The VCSEL may be configured to generate a primary optical mode and a secondary optical mode under direct modulation. The second optical cavity may be configured to resonate the secondary optical mode.