A method for soldering electronic components includes providing a circuit substrate; providing a plurality of electronic components; placing the plurality of electronic components onto the circuit substrate; applying a conductor between the plurality of electronic components and the circuit substrate; providing an energy source which projects an energy beam with a first coverage; enlarging the energy beam and projecting the energy beam onto the circuit substrate with a second coverage; and melting the conductor within the second coverage via the energy beam and fixing the corresponding electronic components on the circuit substrate through the melted conductor. Besides, a method for manufacturing a LED display is disclosed.

A semiconductor laser device includes an active layer, a first layer, and a surface metal film. Multiple quantum well layers are stacked in the active layer; and the active layer is configured to emit laser light of a terahertz wave by an intersubband transition. The first layer is provided on the active layer and includes a first surface in which multiple pits are provided to form a two-dimensional lattice. The surface metal film is provided on the first layer and includes multiple openings. Each of the pits is asymmetric with respect to a line parallel to a side of the lattice. The laser light passes through the multiple openings and is emitted in a direction substantially perpendicular to the active layer.

A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15.

[Object] To provide a light source device and imaging system capable of issuing a warning to a user in accordance with an actual deterioration state of a light source.

[Solution] The light source device includes: at least one light source; a light monitor unit that detects emitted light emitted from the light source; a light source drive unit that controls a drive current or an applied voltage of the light source such that a detection value detected by the light monitor unit indicates a predetermined target value; and a warning unit that performs a primary warning when the drive current or the applied voltage of the light source reaches a predetermined reference value, and performs a predetermined process on a basis of a deterioration level of the light source after the primary warning is performed.

A method for fabrication of three-dimensional nanostructures on top of the surface of a first solid state material is disclosed, which includes steps of (i) deposition of a layer of a second solid state material forming a stable layer-like coverage of the surface, (ii) the subsequent deposition of a third solid state material, having a stronger binding energy with the first solid state material than the second solid state material, (iii) wherein the third solid state material replaces the second solid state material forming an interface with the first material and thus reduces the energy of the system, and (iv) where the resulting excess second solid state material forms three-dimensional nanostructures. The structure can be covered with another (fourth) solid state material, which eventually can be the same as the first material or a different one, and the three dimensional nanostructures form capped quantum dots or quantum wires. The deposition steps can be repeated and extended to provide necessary functionality in the resulting device structure.

A tunable wavelength laser comprising a laser cavity formed by a broadband mirror and a comb mirror. The laser cavity comprising a gain region. The laser cavity is configured such that a non-integer number of cavity modes of the laser cavity are between two consecutive reflection peaks of the comb mirror.

A device is made up of an active structure attached to a substrate, the active structure having a facet through which light couples between the active structure and another structure attached to the substrate; and an active region comprising a quantum well region that includes a sub-region, adjacent the facet, configured to undergo QWI in response to heat. The active structure also contains a heating element, positioned close to the facet and operable such that heat generated by the heating element raises a temperature of the sub-region of the active region near the facet high enough to activate QWI in that sub-region, in turn causing a reduction in optical absorption, without raising temperatures in any other portion of the active region enough to cause significant thermal stress at any interface between the substrate and the active structure.

A semiconductor laser includes a mesa structure disposed on a principal surface of a substrate, the mesa structure extending in a direction of a waveguide axis, the mesa structure including an active region that includes a plurality of quantum well structures arranged in a direction of a first axis intersecting the waveguide axis, the active region having top and bottom surfaces, and first, second, and third side surfaces; an emitter region disposed on at least one of the first and second side surfaces, and the top and bottom surfaces; and a collector region including a quantum filter structure disposed on at least one of the first, second, and third side surfaces. The collector region is separated from the emitter region on the mesa structure. The first and second side surfaces extend in the direction of the waveguide axis. The third side surface extends in a direction intersecting the waveguide axis.

A method for fabrication of three-dimensional nanostructures on top of the surface of a first solid state material is disclosed, which includes steps of (i) deposition of a layer of a second solid state material forming a stable layer-like coverage of the surface, (ii) the subsequent deposition of a third solid state material, having a stronger binding energy with the first solid state material than the second solid state material, (iii) wherein the third solid state material replaces the second solid state material forming an interface with the first material and thus reduces the energy of the system, and (iv) where the resulting excess second solid state material forms three-dimensional nanostructures. The structure can be covered with another (fourth) solid state material, which eventually can be the same as the first material or a different one, and the three dimensional nanostructures form capped quantum dots or quantum wires. The deposition steps can be repeated and extended to provide necessary functionality in the resulting device structure.

A heterogenous device includes a passive waveguide structure and an active waveguide structure. The passive waveguide structure is attached to a substrate and includes a dielectric layer. The active waveguide structure is attached to a top surface of the passive waveguide structure and includes a quantum well layer overlying an InGaP layer. The InGaP layer provides n-contact functionality.

A heterogenous device includes a passive waveguide structure and an active waveguide structure. The passive waveguide structure is attached to a substrate and includes a semiconductor layer. The active waveguide structure is attached to a top surface of the passive waveguide structure and includes a quantum well layer overlying an InGaP layer. The InGaP layer provides n-contact functionality.