A power module for operating a vehicle, in particular an electric vehicle and/or a hybrid vehicle, comprising numerous semiconductor components, which form at least one topological switch; an input contact for supplying an input current to the semiconductor components; a control electronics for controlling the semiconductor components, to generate an output current based on the input current; an output contact for outputting the output current; wherein the control electronics is configured to set a gate current for one of the semiconductor components based on one or more status parameters for the semiconductor component.

A power module for operating a vehicle, in particular an electric vehicle and/or a hybrid vehicle, comprising numerous semiconductor components, which form at least one topological switch; an input contact for supplying an input current to the semiconductor components; a control electronics for controlling the semiconductor components, to generate an output current based on the input current; an output contact for outputting the output current; wherein the control electronics is configured to set a gate current for one of the semiconductor components based on one or more status parameters for the semiconductor component.

A power semiconductor module includes at least one upper arm provided between a positive electrode line and a node and including a power semiconductor device and a freewheeling diode connected in parallel, at least one lower arm provided between a negative electrode line and the node and including a power semiconductor device and a freewheeling diode connected in parallel, and a snubber circuit provided between the positive electrode line and the negative electrode line. The snubber circuit includes a snubber capacitor and a snubber resistor connected in series. At least one control terminal outputs a voltage representing the temperature of the snubber resistor or a voltage related to the temperature of the snubber resistor to a driver that drives the power semiconductor device.

In accordance with an embodiment, a method of controlling a switch driver includes energizing a first inductor in a first direction with a first energy; transferring the first energy from the first inductor to a second inductor, wherein the second inductor is coupled between a second switch-driving terminal of the switch driver and a second internal node, and the second inductor is magnetically coupled to the first inductor; asserting a first turn-on signal at the second switch-driving terminal using the transferred first energy; energizing the first inductor in a second direction opposite the first direction with a second energy after asserting the first turn-on signal at the second switch-driving terminal; transferring the second energy from the first inductor to the second inductor; and asserting a first turn-off signal at the second switch-driving terminal using the transferred second energy.

There is obtained an electric-power conversion apparatus that prevents it that the temperature of a semiconductor switching device reaches a breakage temperature and hence the semiconductor switching device is broken and that realizes continuity of driving. The electric-power conversion apparatus includes a temperature sensor that detects a temperature of semiconductor switching device, and a temperature rising rate determination unit that compares a predetermined first threshold value with a temperature rising rate calculated based on a temperature detection value detected by the temperature sensor and determines that the temperature rising rate has exceeded the first threshold value; when the temperature rising rate determination unit determines that the temperature rising rate has exceeded the first threshold value, protective operation for suppressing an output of an electric-power conversion unit is performed.

There is obtained an electric-power conversion apparatus that prevents it that the temperature of a semiconductor switching device reaches a breakage temperature and hence the semiconductor switching device is broken and that realizes continuity of driving. The electric-power conversion apparatus includes a temperature sensor that detects a temperature of semiconductor switching device, and a temperature rising rate determination unit that compares a predetermined first threshold value with a temperature rising rate calculated based on a temperature detection value detected by the temperature sensor and determines that the temperature rising rate has exceeded the first threshold value; when the temperature rising rate determination unit determines that the temperature rising rate has exceeded the first threshold value, protective operation for suppressing an output of an electric-power conversion unit is performed.

Disclosed herein are systems and methods for low power excitation of wireless power transmitters configured to transmit high power. The exemplary systems and methods include disabling a power factor correction circuit of the transmitter, and adjusting one or more variable impedance components of the impedance network to obtain a minimum attainable impedance. The variable impedance components can be configured to operate between the minimum attainable impedance and a maximum attainable impedance. The systems and methods can include adjusting a phase shift angle associated with one or more transistors of the inverter and driving the transmitter such that the transmitter resonator coil generates a magnetic flux density less than or equal to a field safety threshold.

A switch controller coupled to control a transistor. The switch controller comprising an interface coupled to receive a command signal in response to an event sensed in a control system. The command signal is representative of a first command to control the transistor with a first drive strength or a second command to control the transistor with a second drive strength. The switch controller is coupled to adjust a fall time or a rise time, or to adjust both the fall time and the rise time, of a voltage across the transistor in response to the command signal. The fall time or the rise time, or both the fall time and the rise time in response to the second command is shorter than the fall time or the rise time, or both the fall time and the rise time in response to the first command.

A low voltage, low frequency multi-level power converter capable of power conversion is disclosed. The power converter may include a low voltage, low frequency circuit that includes a plurality of phase-shifting inverters in series; a plurality of low voltage source inputs, and a plurality of phase-shifting inverters in series. Each of the plurality of phase-shifting inverters may be configured to receive at least one of the plurality of low voltage source inputs; and generate at least one square wave output. A semi-sine wave output may be derived from the generated at least one square wave output.

A low voltage, low frequency multi-level power converter capable of power conversion is disclosed. The power converter may include a low voltage, low frequency circuit that includes a plurality of phase-shifting inverters in series; a plurality of low voltage source inputs, and a plurality of phase-shifting inverters in series. Each of the plurality of phase-shifting inverters may be configured to receive at least one of the plurality of low voltage source inputs; and generate at least one square wave output. A semi-sine wave output may be derived from the generated at least one square wave output.